BD679G

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 1.5A, 3V
Power - Max:	40W
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-225AA
Base Part Number:	BD679

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Introduction to the BD679G Transistor

The BD679G is a PNP silicon bipolar transistor manufactured by Motorola to be used for general-purpose and switching applications. The two main parts of a transistor are the base and the collector, and the BD679G follows the general structure of any bipolar PNP transistor with a base, a collector, and an emitter.

Design Features of the BD679G

The BD679G is engineered to provide a current gain rating of 150, an equivalent continuous collector current of 0.15A, and a continuous collector-emitter voltage of 80V. To ensure a low power dissipation capability, the BD679G has a maximum power dissipation of 800mW. Moreover, this particular transistor is designed to operate at temperatures ranging from -65°C to 125°C. Additional features include a maximum frequency of 300MHz, a relatively low capacitance of 8pF, and a low turn-on voltage of 1.5V.

Application Fields of the BD679G

The BD679G is a versatile general-purpose transistor that can be used in a wide range of applications, including motor control, audio amplification, switch-mode power supplies, voltage regulators, and logic level converters. Due to its low capacitance, the BD679G is also suitable for high-speed switching applications.

Working Principle of the BD679G

The BD679G is an NPN transistor, which means it is a three-terminal solid-state device with the following three components: the base, the collector, and the emitter. The transistor operates on the principle of controlling the current flow between the collector and the emitter through the use of a base voltage. When a voltage is applied to the base, it causes a small current flow between the collector and emitter which allows a larger current flow to occur between them. By controlling the voltage applied to the base, the current flowing between the collector and emitter can be increased or decreased.

Conclusion

The BD679G is a highly versatile general-purpose transistor designed by Motorola to be used in a wide range of applications. Its low capacitance and its ability to handle high frequencies make it an excellent choice for high-speed switching applications. Moreover, its high current gain rating and low power dissipation make it an ideal choice for amplifier circuits. The transistor works on the principle of controlling the current flow between the collector and the emitter by controlling the voltage applied to the base. The BD679G is easy to use, reliable, and energy-efficient, making it a great choice for many applications.

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