Allicdata Part #: | BD678GOS-ND |
Manufacturer Part#: |
BD678G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 60V 4A TO225 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 60V 4A ... |
DataSheet: | BD678G Datasheet/PDF |
Quantity: | 3882 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 30mA, 1.5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | BD678 |
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The BD678G is a type of bipolar junction transistor (BJT). It is a general-purpose, high-power NPN transistor. This transistor is designed for a wide range of applications including industrial, automotive, consumer, and communication systems, as well as motor drive circuits. It is especially suitable for power amplifier stages of audio systems, where its maximum power dissipation of 15W and its high voltage capability makes it a popular choice.
The BD678G is a type of NPN transistor, meaning the collector is the negative side and the emitter is the positive side. It has three active terminals; the emitter, collector, and base. The emitter is the input terminal and it is connected to a positive voltage source. The collector is the output terminal and is connected to a load resistor. The base is the control terminal and is connected to an appropriate voltage source to allow current to flow through the transistor. The BD678G has a wide operating range of voltage (VCEO) and collector current (IC), making it suitable for a wide variety of applications.
The working principle of the BD678G is based on the changes in the base-emitter voltage and collector-emitter voltage. When the base-emitter voltage is increased, the current from the emitter to the base increases, resulting in an increased collector voltage. This increases the flow of current from the collector to the emitter, which increases the output voltage. Conversely, when the base-emitter voltage is decreased, the current from the base to the emitter decreases, and the output voltage decreases. This allows for the transistor to be used as an amplifier, or to switch electrical signals on and off.
The BD678G is a popular choice for many applications due to its low cost, high power dissipation, and high voltage capability. It is widely used in industrial, consumer, and communication systems, as well as motor drive circuits. Its wide operating range also makes it a great choice for power amplifier stages of audio systems. Due to its high power dissipation and high reliability, it is also a popular choice for automotive applications.
In summary, the BD678G is a popular general-purpose, high-power NPN transistor. It is suitable for a wide range of applications including industrial, automotive, consumer, and communication systems, as well as motor drive circuits. Its wide operating range makes it suitable for power amplifier stages of audio systems. The working principle of this transistor is based on the changes in the base-emitter voltage and collector-emitter voltage.
The specific data is subject to PDF, and the above content is for reference
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