BD678G Allicdata Electronics
Allicdata Part #:

BD678GOS-ND

Manufacturer Part#:

BD678G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 60V 4A TO225
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 4A ...
DataSheet: BD678G datasheetBD678G Datasheet/PDF
Quantity: 3882
Stock 3882Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-225AA
Base Part Number: BD678
Description

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The BD678G is a type of bipolar junction transistor (BJT). It is a general-purpose, high-power NPN transistor. This transistor is designed for a wide range of applications including industrial, automotive, consumer, and communication systems, as well as motor drive circuits. It is especially suitable for power amplifier stages of audio systems, where its maximum power dissipation of 15W and its high voltage capability makes it a popular choice.

The BD678G is a type of NPN transistor, meaning the collector is the negative side and the emitter is the positive side. It has three active terminals; the emitter, collector, and base. The emitter is the input terminal and it is connected to a positive voltage source. The collector is the output terminal and is connected to a load resistor. The base is the control terminal and is connected to an appropriate voltage source to allow current to flow through the transistor. The BD678G has a wide operating range of voltage (VCEO) and collector current (IC), making it suitable for a wide variety of applications.

The working principle of the BD678G is based on the changes in the base-emitter voltage and collector-emitter voltage. When the base-emitter voltage is increased, the current from the emitter to the base increases, resulting in an increased collector voltage. This increases the flow of current from the collector to the emitter, which increases the output voltage. Conversely, when the base-emitter voltage is decreased, the current from the base to the emitter decreases, and the output voltage decreases. This allows for the transistor to be used as an amplifier, or to switch electrical signals on and off.

The BD678G is a popular choice for many applications due to its low cost, high power dissipation, and high voltage capability. It is widely used in industrial, consumer, and communication systems, as well as motor drive circuits. Its wide operating range also makes it a great choice for power amplifier stages of audio systems. Due to its high power dissipation and high reliability, it is also a popular choice for automotive applications.

In summary, the BD678G is a popular general-purpose, high-power NPN transistor. It is suitable for a wide range of applications including industrial, automotive, consumer, and communication systems, as well as motor drive circuits. Its wide operating range makes it suitable for power amplifier stages of audio systems. The working principle of this transistor is based on the changes in the base-emitter voltage and collector-emitter voltage.

The specific data is subject to PDF, and the above content is for reference

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