BD679A Allicdata Electronics
Allicdata Part #:

497-7175-5-ND

Manufacturer Part#:

BD679A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN DARL 80V 4A SOT-32
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 4A ...
DataSheet: BD679A datasheetBD679A Datasheet/PDF
Quantity: 30
Stock 30Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Power - Max: 40W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3
Base Part Number: BD679
Description

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The BD679A is a high-power transistor designed for use in the audio power amplification field, capable of delivering 80W of peak output power into a 4 ohm load. It is a single-chip power transistor, intended for use as a power output device in high-power audio amplifiers operating from a wide range of power supplies. The BD679A is an NPN chip, with a maximum collector-emitter voltage of 60V. It is optimized for operation at a supply voltage range of 12V to 24V and a maximum current gain of 54.

The device is based on a bipolar junction transistor (BJT) architecture, with a “base” on which the current flows, and a “collector” and an “emitter” connected to the two other pins of the transistor. The current gain of the transistor is determined by the ratio of the “base-to-collector” resistance to the “emitter-to-collector” resistance. When the collector-emitter voltage (Vce) is increased, the collector current (Ic) increases, resulting in a higher gain, or “power amplification”.

The BD679A is designed to deliver high power output at high frequency. It has a maximum frequency limit of 10MHZ and a maximum voltage swing of 38.5V. The maximum power gain of the BD679A is 200dB and it can easily handle low-impedance loads, including 4Ω, as well as higher impedance components. The device also has a remarkably low thermal resistance and a temperature range of -55C to +150C.

The BD679A works by amplifying a signal applied to the input and then transferring the amplified signal to the output. The current flowing in the base is amplified by the transistor. For a given input voltage, the current flowing through the base changes its value by the amount of current flowing through the transistor, which is determined by the current gain. When the voltage applied to the base of the transistor is increased, the collector current (Ic) also increases, resulting in a higher output power.

The BD679A is an ideal choice for audio amplifiers as it offers good thermal management and high power output with low impedance loads. The device is also easy to use as it has a very simple pin layout and does not require external components for proper operation. Furthermore, the device is resistant to short-term transient events such as power transients or momentary output shorts. This makes it an ideal choice for applications requiring high power output, such as HiFi amplifiers, PA systems, and guitar amplifiers.

In conclusion, the BD679A is a single-chip transistor designed for use in the audio power amplification field. It has a maximum collector-emitter voltage of 60V, a maximum frequency limit of 10MHZ, a maximum power gain of 200dB and a temperature range of -55C to +150C. The device is designed with a bipolar junction transistor (BJT) architecture, which allows it to deliver high power output with low impedance components. Furthermore, the device is easy to use and highly resistant to short-term transients, making it an ideal choice for audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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