Allicdata Part #: | BD676AS-ND |
Manufacturer Part#: |
BD676AS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 45V 4A TO-126 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 45V 4A ... |
DataSheet: | BD676AS Datasheet/PDF |
Quantity: | 1970 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 2.8V @ 40mA, 2A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 2A, 3V |
Power - Max: | 14W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD676 |
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The BD676AS is a bipolar junction transistor (BJT) designed to be used in a variety of applications. It is a single type of transistor, which means the current passes through a single component. The device consists of two p-n junction layers, known as the emitter and the base, and an additional layer, known as the collector. These three layers are made of different types of semiconductor materials and are connected in a specific design to form a single component. The BD676AS is rated for an operating temperature range of -65 to 175 °C and can handle a maximum collector-emitter voltage between -250 and 350 V.
The BJT is an active device, meaning it can control the flow of current from its collector to the emitter. This makes it an ideal choice for many applications, such as amplifying signals (audio or video), switching, and providing the current drive required for transistors and other digital logic devices. Because of its small size and low power consumption, it can be used in a wide range of portable or battery-powered devices. The device is also suited to linear applications, such as motor control and audio amplifiers, because of its high input impedance and relatively low output capacitance.
The BD676AS works by allowing current to flow when the emitter-base junction is forward biased. A base current then flows from the emitter to the base, which causes a larger current to flow from the collector to the emitter. This current flow is proportional to the base current and is known as the collector current. The device will remain in this state as long as the current flowing from the base to the collector is large enough to keep the emitter-base junction forward biased. When the base current falls below a certain point, the device turns off, at which point it is said to be in the cut-off region.
The BD676AS is a reliable device that can operate at high frequencies and withstand high voltage spikes. It is used in a wide range of applications, from audio amplifiers, to motor controls, and even power supplies. Its stability and low power consumption also make it a good choice for battery-powered applications. In addition, its small size makes it an ideal fit for circuits where board space is a premium.
The BD676AS is a versatile transistor that can be used in many different applications. It is highly reliable, stable, and capable of operating at high voltages and frequencies. Its small size also helps to save board space, making it a great choice for portable devices. Its low power consumption helps keep power drain to a minimum, making it a great choice for battery-powered systems. By understanding its working principle and applications, designers can be confident in the results they will get from the BD676AS.
The specific data is subject to PDF, and the above content is for reference
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