BD678AS

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	2.8V @ 40mA, 2A
Current - Collector Cutoff (Max):	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	750 @ 2A, 3V
Power - Max:	14W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126
Base Part Number:	BD678

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Introduction

The BD678AS is a single-piece bipolar junction transistor (BJT) designed for high-power applications. It is an NPN device and has an integrated base-emitter junction as well as a built-in base resistor. The transistor is commonly used in power supplies, audio amplifiers and other applications where high power output is required.

Features

The BD678AS has a wide variety of features which make it an ideal choice for power amplifiers and other high-power applications. It has a high current gain of up to 100 and a high-power dissipation of up to 2.5 W. The collector-emitter breakdown voltage is 100 V, which allows for excellent performance in high-voltage applications. It also has a wide operating temperature range from -55°C to +125°C, making it suitable for a range of applications.

Applications

The BD678AS is widely used in high-power amplifiers, power supplies, and other applications where high current or high power output is needed. It is especially suited for audio amplifier applications due to its high current gain and wide operating temperature range. It is also used in circuit protection circuits, such as over-temperature protection and current-limiting protection circuits.

Working Principle

The BD678AS works through a process called base-emitter biasing. This process involves using a junction transistor to control the current flow through a circuit. The transistor uses its base-emitter junction (the base terminal is connected to the emitter terminal) to generate voltage by allowing current to flow through it. This voltage is then used to control the current flow in the circuit.The base terminal is connected to the emitter terminal through a built-in base resistor. This resistor serves to limit the voltage that can be applied to the base-emitter junction. It also helps to protect the transistor from over-voltage and over-current conditions. The collector-emitter voltage is applied across the base-emitter junction, which in turn controls the current flow through the collector-emitter terminals.

Conclusion

The BD678AS is an excellent choice for high-power applications. It has many features which make it an ideal choice for audio amplifiers and other power amplifiers. It also has a wide operating temperature range, making it suitable for a variety of applications. Its built-in base resistor provides excellent protection from over-voltage and over-current conditions. Finally, its base-emitter bias process allows for efficient current control.

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