Allicdata Part #: | BF1100,215-ND |
Manufacturer Part#: |
BF1100,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 14V 30MA SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 9V 10mA 800MHz SOT... |
DataSheet: | BF1100,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | -- |
Voltage - Test: | 9V |
Current Rating: | 30mA |
Noise Figure: | 2dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 14V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF1100 |
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BF1100,215 is a type of field effect transistor (FET) with Radio Frequency (RF) applications. It is part of a generic class of devices known as metal oxide semiconductor field effect transistors (MOSFETs). FETs are field-effect transistors whose basic operation relies on the physics principle of the electrostatic charge. The transistors are formed by three layers; an N-type layer, an insulation layer and a P-type layer. By controlling the current flow between these layers, it is possible to control the intensity of an external electric field.
One of the primary applications of FETs is in RF communication systems. BF1100,215 is a very efficient FET when it comes to RF applications. The BF1100,215 features an internal gate-to-source capacitance of 2.2 pF, making it an ideal component for use in high-frequency interfaces. Additionally, it has an input capacitance of 4.6pF, further enhancing its suitability for use in RF circuits. Furthermore, the FETs low pinch off voltage of 1.2V also makes it highly desirable for RF applications.
In addition, BF1100,215 also has several advantages over other types of transistors. One of these advantages is its low power dissipation. The FETs low wattage rating of 0.6W ensures that the device does not waste power, making it more efficient than other competing devices. Furthermore, the device\'s low voltage rating of 6V means that it can be used in low power circuits as well as in higher power ones. This makes it a highly versatile component.
In terms of its working principle, the BF1100,215 operates in the same way that other metal oxide semiconductor transistors work. An internal gate electrostatically controls the flow of electrical current through the transistor. This control is achieved by either raising or lowering the gate voltage. If the voltage is raised, then the current flowing through the transistor is increased, while a lower voltage results in a decreased current flow. This mechanism of electrostatic control is what allows the device to be used effectively in RF applications.
In conclusion, BF1100,215 is a highly efficient FET offering a wide range of uses in RF circuits. With its low power dissipation, high input capacitance and low pinch off voltage, the BF1100,215 is an ideal component for designers looking for FETs with robust RF capabilities. Furthermore, its working principle of electrostatically controlling the current flow makes it a versatile option for designers needing to meet their RF requirements.
The specific data is subject to PDF, and the above content is for reference
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