BF422ZL1 Allicdata Electronics
Allicdata Part #:

BF422ZL1-ND

Manufacturer Part#:

BF422ZL1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 250V 0.05A TO-92
More Detail: Bipolar (BJT) Transistor NPN 250V 50mA 60MHz 830mW...
DataSheet: BF422ZL1 datasheetBF422ZL1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 830mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BF422
Description

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BF422ZL1 transistors are a high-performance NPN (negative-positive-negtive) silicon epitaxial planar transistor that can be used in a variety of applications. The transistors are primarily used in amplifiers, analog switches, push-pull circuits, and other low-frequency switching circuits.

BF422ZL1 transistors benefit from a wide range of features that make them suitable for a variety of applications: they have high input impedance, low noise, high gain-bandwidth product, high slew rate, and low collector-emitter saturation voltage.

The BF422ZL1 transistor is designed to operate as a common-base amplifier configuration, which is ideal for high speed, low noise switching applications. The transistor is formed by connecting the base, collector, and emitter terminals in a linear fashion, allowing for a high level of control over the transistor’s characteristics. The common-base configuration is also beneficial in applications that require high input impedance, as the base and collector terminals are connected together, making them more resilient and less likely to be affected by external noise.

The BF422ZL1 transistors have a maximum collector-emitter voltage of 30V and a maximum collector current of 150mA. The transistor is also available in both through-hole and surface-mount packages and is hermetically sealed to protect against environmental contaminants. The transistors have a relatively high current gain and can be used in any circuit that requires fast switching speeds and high accuracy.

BF422ZL1 transistors will typically operate in forward bias, with a potential applied between the base and emitter, and in reverse bias, with a potential applied between the collector and emitter. The amount of bias applied will depend on the required current gain, and the characteristics of the load. The collector-emitter saturation voltage is typically very low in both forward and reverse bias, making the transistor an ideal choice for low-noise switching applications.

The transistors offer a wide range of applications, including audio amplifiers, low frequency precision circuits, switching circuits, transimpedance amplifiers, and analog switches. As a high-performance device, the transistors offer excellent speed, accuracy, and stability, making them suitable for a variety of demanding applications. Additionally, the high current gain of the BF422ZL1 transistors makes them an ideal choice for circuits that require high currents.

In conclusion, the BF422ZL1 transistors are a high-performance NPN silicon epitaxial planar transistor that can be used in a variety of applications. The transistor is designed to operate as a common-base amplifier configuration, offering excellent speed, accuracy, and stability. Additionally, the high current gain of the BF422ZL1 transistors makes them ideal for circuits that require high currents, making them suitable for a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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