Allicdata Part #: | BF422,116-ND |
Manufacturer Part#: |
BF422,116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 250V 0.05A SOT54 |
More Detail: | Bipolar (BJT) Transistor NPN 250V 50mA 60MHz 830mW... |
DataSheet: | BF422,116 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 30mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 20V |
Power - Max: | 830mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF422 |
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The BF422,116 is a bipolar junction transistor (BJT), single type which was developed by Philips Semiconductors in 1996. It is used in a variety of applications where it provides excellent robustness, stability, and reliability. It is used for a variety of different applications, from amplified radio-frequency (RF) power amplifiers, audio and telecommunications equipment, to linear amplifiers and analog switches.
The BF422,116 is built around an NPN silicon epitaxial planar transistor in a plastic package. It Features relatively low gain and low power output. It has a low-noise design, wide bandwidth, and linearity up to MHz frequencies. It has a high input impedance, low distortion characteristics, high common-mode rejection ratio (CMRR), and fast response speed. The internal structure of the device is designed to minimize noise levels and minimizes the effects of temperature changes.
Some of the most common applications of the BF422,116 BJT include RF amplifiers, audio and telecommunications equipment, line drivers, power controllers, and switch-mode power supplies. The device is also commonly used as an output stage for modulators, demodulators, and modems. It is also used in voltage-controlled oscillators, gate drivers, and regulators.
The working principle of the BF422,116 BJT relies on the use of the electronics of charge carriers, or electrons, to control the current flow in the device, which is referred to as a junction transistor. This transistor is formed at the interface of two materials, one of which is a semiconductor, and the other a conductor. When electrical energy is applied to the device, the electrons in the semiconductor are attracted to the conductive material, resulting in a small current flow through the device. This current flow is then amplified as it passes through the BJT, resulting in an increased power output.
The BF422,116 BJT is a versatile device, offering high performance and reliability in a variety of applications. Its low power output and low gain make it well suited for applications such as RF amplifiers and audio equipment. It is also reliable, robust, and offers fast response, making it suitable for applications such as linear amplifiers, voltage-controlled oscillators, and modulators.
The specific data is subject to PDF, and the above content is for reference
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