BF423ZL1G Discrete Semiconductor Products |
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Allicdata Part #: | BF423ZL1GOSTB-ND |
Manufacturer Part#: |
BF423ZL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 250V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 250V 500mA 60MHz 830m... |
DataSheet: | BF423ZL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 20V |
Power - Max: | 830mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF423 |
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BF423ZL1G is a high-current, high-density and high-frequency transistor manufactured by a variety of leading semiconductor manufacturers. It is most commonly used in communications systems, medical imaging and other industrial applications. The device consists of a single bipolar junction transistor (BJT) with three terminals. It is capable of providing a maximum current of 4.5A at a maximum frequency of 6GHz.
This BJT operates at a voltage range between –2V and +100V. It is ideal for applications requiring high current, such as switching and amplifiers. It also offers low output impedance, making it ideal for noise reduction and power efficiency. The device can operate in Class A, AB, and C amplifiers.
The BF423ZL1G has an internal current gain of up to 35dB. This gain is achieved by applying a positive voltage to the base of the transistor. As this voltage is increased, the current gain increases. This is known as the Beta of the transistor, which directly affects the performance of the device.
The transistor also offers a low collector-emitter voltage (Vce) of 0.2V. This makes it ideal for applications that require low input voltages, such as high-efficiency switching power supplies and battery-operated devices. It also helps to improve the overall power efficiency of the circuit.
The device features a low power dissipation of 1.2W at a case temperature of 25°C. This helps to reduce the operating temperature of the circuits, resulting in improved performance and better reliability. Furthermore, the device has a minimum operating temperature of –55°C, making it suitable for harsh environments.
The BF423ZL1G is an excellent choice for applications requiring high switching speed and current capacity. It is also suitable for use in amplifiers, current sources, power supplies and automotive applications. With its wide range of characteristics, this device can be used in a variety of applications.
The BF423ZL1G is an NPN type BJT, with a base-emitter voltage (Vbe) of -0.65V. This transistor operates by allowing electrons to inject from the emitter into the base. As this happens, current is controlled by the amount of voltage applied to the base. A sufficient voltage will cause a current to flow from the collector to the emitter, allowing it to be used as a switch or amplifier.
Furthermore, the transistor can be used for a wide range of applications such as analog switches, optical isolators and signal relays. Furthermore, it can be used for powering wireless sensors, security systems and wireless communication systems.
In conclusion, the BF423ZL1G is an excellent choice for applications requiring high speed and current capacity. It offers low power consumption, low noise and good performance, making it suitable for a wide range of applications. Its wide range of characteristics makes it ideal for various industrial, medical and communications applications.
The specific data is subject to PDF, and the above content is for reference
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