Allicdata Part #: | BF420,116-ND |
Manufacturer Part#: |
BF420,116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 300V 0.05A SOT54 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 50mA 60MHz 830mW... |
DataSheet: | BF420,116 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 30mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 20V |
Power - Max: | 830mW |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF420 |
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The BF420,116 is a single bipolar junction transistor (BJT) specifically designed for use as a general-purpose amplifier. Developed by NXP Semiconductors, its small size and low power consumption make it an ideal choice for a variety of signal-amplifying applications.
The BF420,116 is an NPN transistor with a maximum collector current of 30 mA and a maximum voltage of 40 V. It is composed of a single layer of semiconductor material, typically a silicon crystal, sandwiched between two electrodes. The two electrodes are the emitter, which is the source of electrons, and the collector, which is the collector of the electrons. The third electrode is the base, which acts as a gate between the emitter and collector and controls the flow of electrons between them.
The transistor works by using the voltage that is applied to the base to control the flow of current between the emitter and collector. When the base voltage is below the saturation voltage, the transistor is said to be in its "off" state and no current flows between the emitter and the collector. However, when the base voltage is raised above the saturation voltage, the transistor is said to be "on" and current flows freely between the emitter and the collector. This is known as the transistor\'s switching action and is used in a variety of applications to switch or amplify signals.
Due to its small size and low power consumption, the BF420,116 is often used in a variety of signal-amplifying applications. It is commonly used as a pre-amplifier, but can also be used as a low-noise amplifier, in voltage followers and other circuit topologies. It is also often used in switching applications such as power MOSFETs or high-efficiency analog switches. The BF420,116 can also be used as an output driver in a variety of circuits, including logic gates, amplifiers, oscillators and data converters.
The BF420,116 has been specifically designed for use as a general-purpose amplifier. Its NPN construction, high current range, low on-resistance and low voltage drop make it well suited for this application. It is also easy to configure and is compatible with a wide range of standard circuit designs. Its high levels of reliability and easy integration make the BF420,116 an ideal choice for a wide range of applications in the audio and other electronics industries.
In conclusion, the BF420,116 is an ideal single bipolar junction transistor, specifically designed for use as a general-purpose amplifier. Its small size and low power consumption make it an ideal choice for a variety of signal-amplifying applications, ranging from pre-amplifiers and low-noise amplifiers to power MOSFETs and high-efficiency analog switches. Its easy to configure and compatible with standard circuit designs make it one of the most popular transistor choices on the market today.
The specific data is subject to PDF, and the above content is for reference
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