BFP181E7764HTSA1 Discrete Semiconductor Products

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BFP181E7764HTSA1 is a high-performance RF bipolar transistor. It is specifically designed for use in wifi and Bluetooth applications.

The BFP181E7764HTSA1 transistor is a NPN silicon epitaxial planar transistor designed for thick-film hybrid techniques, and is used in wireless applications. The transistor specifically uses a bulk planar layout for better performance and improved price.

BFP181E7764HTSA1 transistors feature extremely low on-state resistance, providing high switching performance and excellent performance at higher frequencies. The transistor is also very small and is ideal for PCB layout. Due to its small size, it has low parasitic capacitances and inductances, making it ideal for high frequency and high power applications.

The transistor also features a sharp cut-off frequency, providing for efficient operation. The transistor is also highly thermal-resistant, providing stable performance even when used in extreme temperatures.

The BFP181E7764HTSA1 transistor operates by utilizing a BJT-based architecture. The transistor contains an emitter, a base, and a collector. The emitter and the collector are formed from doped and undoped silicon, while the base material is either polysilicon or undoped silicon.

The emitter is where the electrons enter into the transistor, while the collector receives the electrons. Together, they form the input and output stages of the transistor. The internal connection between the emitter and collector is the base. The base is made up of two terminals, and one serves as the output and the other as the input.

When a current is applied to the base, it causes a voltage drop between the two terminals. This causes electrons to flow from the emitter to the collector, and then back to the emitter. This cycle is what amplifies theinput signal andsends it back to the output.

The BFP181E7764HTSA1 transistor can be used in a variety of applications, including wifi and Bluetooth. The transistor is an excellent choice for high-frequency, high-power applications due to its low parasitic capacitances and inductances. It also features extremely low on-state resistance, providing high switching performance. Due to its sharp cut-off frequency, it also provides for efficient operation and improved thermal performance.

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