BFP183WH6327XTSA1 Discrete Semiconductor Products

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BFP183WH6327XTSA1 is a transistor undergoing IEEE certification with JEDEC SOT563 package that belongs to the transistors - bipolar (BJT) - RF group. It is a NPN silicon RF transistor with low noise, linear and wideband characteristics suitable for radio receivers, FM radio and general purpose applications. BFP183WH6327XTSA1 is also known as NXP BFK183W, Fairchild’s 2n3947 and PN-x.

BFP183WH6327XTSA1 is well suited for applications such as HF and VHF receivers, FM receivers, analog applications, transceivers, RF power amplifiers and RF amplifiers. Its features and characteristics include high gain up to 16dB, high forward and reverse isolation from 20 kHz to 500 MHz, excellent power handling, low noise and high linearity, balanced standing wave ratio, high gain up to 16 dB, low Off-Isolation, high bias stability and low power dissipation. It is also designed for use in the most demanding applications.

The general working principle of the BFP183WH6327XTSA1 involves the movement of electrons between two types of conduction materials, one of them being more negatively-charged and the other being more positively-charged. When a voltage source is connected to this transistor, the electrons in the circuitry start to move and generate two types of electric field. The N-type conduction material, which is the negative one, becomes a source of electrons, while the P-type material, which is the positive one, becomes a drain of electrons, thus creating the typical NPN type transistor structure.

The electrons flowing through the transistor generate an electric field between the N-type and the P-type which increases with the intensity of the electric current and results in the amplification of the signal. This amplified current is then used for further amplification or as an output signal. This feature of amplification makes this transistor ideal for use in a wide range of communication and signal processing applications.

The BFP183WH6327XTSA1 is built using a high-quality silicon die and is designed for use in environments where the temperature can range from -25 to +85 degrees Celsius. It has excellent noise and linear characteristics, provides very low distortion and is well-suited for linear and wideband applications. Furthermore, its low power consumption and economical cost make it a perfect solution for radio receivers, FM radio and general purpose applications.

The high linearity and low noise characteristics of BFP183WH6327XTSA1 also make it suitable for use in digital systems. In such applications, it provides better performance than a digital FET because of its lower ON-resistance and higher ON-voltage. The low OFF-current and good CMRR also enable it to efficiently filter out unwanted interference signals in the tracks.

BFP183WH6327XTSA1 is suitable for a wide range of electronic systems, from communication, to signal processing and radio receivers. This chip provides reliable performance in the most demanding applications, using advanced NPN silicon RF transistors technology. Its low power consumption and cost make this transistor an ideal choice for applications such as HF and VHF receivers, analog applications, transceivers, RF power amplifiers and RF amplifiers.

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