BFP196WNH6327XTSA1 Discrete Semiconductor Products

Transistors - Bipolar (BJT) - RF

The BFP196WNH6327XTSA1 is a high-performance RF bipolar junction transistor (BJT). It provides high gain, low noise, and low DC power consumption, making it ideal for a range of applications.

Applications

The BFP196WNH6327XTSA1 is designed for use in ultra-low noise amplifiers, low power amplifier stages for radio transmitters, and driver stages for broadband and low-noise amplifiers. It is especially suitable for receivers in cellular base stations, paging systems, and wireless local area networks.

Features

The primary features of the BFP196WNH6327XTSA1 include: a high gain of 5.5 dB, a low noise figure of 1.3 dB, a maximum power dissipation of 1.3W, and a small-signal isolation of 50 dB. Additionally, it has a frequency range of up to 2.5 GHz, a maximum voltage rating of 20V, and a maximum operating temperature of 110°C.

Working Principles

The BFP196WNH6327XTSA1 is a high-performance RF BJT. It works utilizing the same transistorized three-terminal concept as any other BJT. An emitter is connected to the source, a base is connected to the gate, and a collector is connected to the drain. A voltage applied to the base then causes a current to flow from the emitter to the collector, resulting in a gain in current and power.

In the case of the BFP196WNH6327XTSA1, the transistor is designed to provide a high gain, low noise and low DC power consumption. To achieve this, the transistor\'s internal structure is designed to minimize the induced noise in order to maintain a low noise figure. Additionally, the unit\'s high gain and low DC power consumption are achieved by careful design of its active region and bias networks.

Conclusion

The BFP196WNH6327XTSA1 is a high-performing RF bipolar junction transistor well suited for a range of applications including ultra-low noise amplifiers and other RF applications. It provides excellent performance values in terms of high gain, low noise, and low DC power consumption, making it a great choice for many RF applications. Furthermore, the transistor’s internal structure is designed to minimize noise and maximize performance.