BFP196WH6327XTSA1 Discrete Semiconductor Products

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The BFP196WH6327XTSA1 is a high-power transistor and can be grouped into the Transistors - Bipolar (BJT) - RF category. The BFP196WH6327XTSA1 is a wideband GaAs N-channel enhancement-mode pseudomorphic high electron mobility transistor (pHEMT). This device is designed to use with common source, common gate and common drain operation amplifiers whose input/output impedances have to be matched to 50 ohms.

The BFP196WH6327XTSA1 has a wide variety of applications, from general purpose amplifiers to broadband and high-frequency amplifiers. It is suitable for use in Wi Fi systems, cellular and land mobile radio, cellular base stations, ultra-wideband amplifiers and GPS receivers. It can also be used for military and space applications. Its performance is superior even at higher frequencies, making it a good choice for high-frequency applications.

The BFP196WH6327XTSA1 offers excellent RF performance. It features 25 dB of small-signal gain, a low VSWR of 1.2:1 and a high power gain of 9 dB. Furthermore, its output power is 33 dBm and linearity is excellent, making this transistor a good choice for high power applications. Its frequency range is from 5-500MHz.

The BFP196WH6327XTSA1 operates using a common-source architecture. This means that the drain and gate are connected to ground and the source to the AC voltages. This transistor is usually biased in the linear region of operation (class A amplifiers) and operates in saturation due to large operating currents. This transistor is usually used as a linear amplifier, where input and output power levels need to be modified together with small-signal gain and bandwidth.

The BFP196WH6327XTSA1 also offers good stability and high linearity due to its high input/output impedance. It has low thermal resistance of 4° C/W and its gain variation is less than 1 dB over a temperature range of -25°C to +85°C. This transistor is also very tolerant to manufacturing process variation and changes in part specifications.

In summary, the BFP196WH6327XTSA1 is a high-performance, wideband GaAs N-channel enhancement-mode pseudomorphic high electron mobility transistor (pHEMT). It is designed for use in high-frequency applications, such as Wi Fi systems, cellular and land mobile radio, cellular base stations, ultra-wideband amplifiers and GPS receivers. It offers excellent RF performance with small-signal gain of 25 dB and output power of 33 dBm. It also features low VSWR of 1.2:1 and high power gain of 9 dB. In addition, it has low thermal resistance of 4° C/W and linearity variation of less than 1 dB which makes it a good choice for high power applications.

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