Allicdata Part #: | BFP182RE7764HTSA1TR-ND |
Manufacturer Part#: |
BFP182RE7764HTSA1 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 12V SOT-143R |
More Detail: | RF Transistor NPN 12V 35mA 8GHz 250mW Surface Moun... |
DataSheet: | BFP182RE7764HTSA1 Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.07382 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
Gain: | 22dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 8V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-143R |
Supplier Device Package: | PG-SOT143R-4 |
Base Part Number: | BFP182 |
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The BFP182RE7764HTSA1 is a type of transistor designed specifically for radiofrequency (RF) applications. It is categorized as a Bipolar Junction Transistor (BJT). This type of transistor is made up of two terminals connected to a single junction, allowing the transistor to perform two functions: switching and amplifying. This article will discuss the application field and working principle of the BFP182RE7764HTSA1.
The BFP182RE7764HTSA1 is a high-power transistor designed for use in RF applications. This transistor is capable of handling an operating power up to 75 watts and a peak power up to 450 watts. It is designed to operate in the frequency range of 10 to 500 MHz. This RF transistor is ideal for use in high-power RF components, such as amplifiers and transmitters, as well as in microwave applications.
The basic working principle of the BFP182RE7764HTSA1 is similar to that of a standard BJT. This type of transistors consists of two terminals, the base and the emitter, which are connected to a single junction. As current is applied to the base, it attracts electrons from the emitter. This movement of electrons creates a current flow from the emitter to the collector, which amplifies the current. In other words, the BFP182RE7764HTSA1 acts like an amplifier, amplifying the current and voltage of a signal.
The BFP182RE7764HTSA1 is also capable of switching. When the base is closed, no current passes through the emitter, and the current flow between the emitter and the collector is stopped. On the other hand, when the base is open, current will flow through the emitter, allowing the current flow between the emitter and the collector to start. In this way, the BFP182RE7764HTSA1 is able to act like a switch, controlling the current flow between two points.
The BFP182RE7764HTSA1 is a very useful transistor for radiofrequency (RF) applications. It is capable of operating in the frequency range of 10 to 500MHz and is able to handle up to 75 watts of operating power and 450 watts of peak power. It is an excellent choice for use in high-power RF components, such as amplifiers and transmitters, as well as in microwave applications. Furthermore, it is able to perform two functions: amplifying and switching. This makes the BFP182RE7764HTSA1 an invaluable asset for RF engineers.
The specific data is subject to PDF, and the above content is for reference
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