BFP196WE6327HTSA1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF transistors, or Bipolar Junction Transistors (BJT), are devices that are commonly used in radio frequency (RF) applications, including multiplexers, amplifiers, switches, oscillators, and more. The BFP196WE6327HTSA1 is a widely used RF transistor, providing a wide range of RF performance capabilities and supporting a variety of applications.

The BFP196WE6327HTSA1 is a PNP epitaxial planar RF bipolar transistor, specifically designed for high-level amplification in 4-20 watt mobile radio applications. It is specifically packaged in a 1.6x1.6mm2 6-lead Surface Mounted Device (SMD) package, and is composed of emitter, base, and collector regions connected by an internal metal source. This package provides excellent heat transfer capability, helping to maximize its life. Additionally, the BFP196WE6327HTSA1 features a collector-base junction reverse breakdown voltage of 350V, and a single diffused resistor which allows the collector current to be adjustable.

The BFP196WE6327HTSA1 offers further enhanced RF performance with its frequency doubling architecture that eliminates the third harmonics, low turn-on resistance, and low noise. Additionally, it is especially suited for high fidelity circuit applications due to its low harmonic distortion levels, high gain, and low power consumption. This versatility allows it to be used as a single amplifier or as part of a powerful amplifier system.

The BFP196WE6327HTSA1 is most commonly used in communication systems, such as cell phones, radios, television receivers, and satellite communication systems, as well as other medium-power to high-power applications. In addition to communication systems, it can also be used in medium-voltage applications such as voltage-controlled filters, variable-gain amplifiers, and pedestal amplifiers.

The working principle of the BFP196WE6327HTSA1 is similar to other bipolar transistors. An electrical current flows from the base electrode to the collector electrode, and this current then flows from the collector back to the emitter. When the base is positively charged, the current flowing back from the collector to the emitter decreases, causing the voltage drop across the collector-emitter junction to decrease. This decrease in voltage drop increases the current flow from the emitter to the collector, thus amplifying the input signal to the collector. When the base voltage is negative, the current flowing back to the emitter increases, causing the voltage drop across the collector-emitter junction to increase, resulting in the input signal to the collector being attenuated.

The BFP196WE6327HTSA1 is a versatile device that is capable of providing a wide range of RF performance capabilities and supporting a variety of applications. Its frequency doubling architecture eliminates third harmonics, contributes to low-noise operation, and allows it to be used in medium-to-high power RF applications. It is well-suited for uses in communication systems, medium-voltage applications, and more.

The specific data is subject to PDF, and the above content is for reference