BFP193WE6327HTSA1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain:	13.5dB ~ 20.5dB
Power - Max:	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 30mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4
Base Part Number:	BFP193

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Introduction to BFP193WE6327HTSA1

The BFP193WE6327HTSA1 is a NPN bipolar junction transistor (BJT) that is primarily used in RF applications. This type of transistor has the ability to amplify signals quickly and efficiently, making it an ideal component for RF applications.

Application Field of BFP193WE6327HTSA1

The BFP193WE6327HTSA1 is well-suited for use in high frequency radio applications. This is because of its fast switching speed and low noise characteristics, making it an ideal component for a wide range of radio transmitters and receivers. This transistor can also be used for switching power supplies and low power amplifiers, because of its high voltage and high current capabilities.

Working Principle of BFP193WE6327HTSA1

The BFP193WE6327HTSA1 operates on a junction principle. This means that there is a thin p-type layer of semiconductor material between two n-type layers, which allows charge carriers to move between them when a voltage is applied across the junction. This movement of electrons is referred to as the current flow, which is then amplified by the transistor to produce its required output voltage or current.The basis of the NPN configuration is that when a forward bias (positive voltage) is applied to the base (p-type layer) of the transistor, a large number of electrons are attracted to the base and this allows for a large current flow through the collector (n-type layer). This is known as a saturation state, because the transistor is saturated with electrons and is unable to carry any more. When a reverse bias (negative voltage) is applied to the base, the transistor is at the cutoff state and the current is blocked.

Conclusion

The BFP193WE6327HTSA1 is a NPN bipolar junction transistor (BJT) that is primarily used in RF applications. It has a fast switching speed and low noise characteristics, making it an ideal component for a wide range of radio transmitters and receivers. Its working principle is based on a junction principle, where a thin p-type layer of semiconductor material lies between two n-type layers and allows charge carriers to move between them when a voltage is applied across the junction. This amplifies the current flow, which is then used to produce the required output voltage or current.

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