BFP183WE6327BTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFP183WE6327BTSA1TR-ND |
Manufacturer Part#: |
BFP183WE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 12V SOT-343 |
More Detail: | RF Transistor NPN 12V 65mA 8GHz 450mW Surface Moun... |
DataSheet: | BFP183WE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz |
Gain: | 22dB |
Power - Max: | 450mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 15mA, 8V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BFP183 |
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The BFP183WE6327BTSA1 is a bipolar transistor designed for use in radio frequency (RF) applications. This device is an NPN type transistor with a maximum collector-emitter voltage of 45 volts and a power dissipation of 5 watts. Its maximum frequency of operation is up to 700 MHZ.
The BFP183WE6327BTSA1 is especially suited for RF systems requiring high gain and low noise. This device is well-suited for applications such as RF amplifiers, low noise amplifiers, mixers, and oscillators. It has a fast switching time of 570 ns and excellent linearity.
The working principle of the BFP183WE6327BTSA1 is based on the concept of current gain, where the current flowing through the collector is much greater than the current entering the base. This current gain is achieved by modulating the input current at the base by the input signal, which then produces an amplified output at the collector. The current gain is determined by the Beta parameter, which is typically around 100 for the BFP183WE6327BTSA1.
The primary application field for the BFP183WE6327BTSA1 is in RF systems. It is well-suited for RF systems requiring high gain and low noise. It can be used in RF amplifiers, low noise amplifiers, mixers, and oscillators. It has a fast switching time and excellent linearity.
The BFP183WE6327BTSA1 is a versatile bipolar transistor designed for use in radio frequency (RF) applications. This device is especially suited for RF systems requiring high gain and low noise. It is also suitable for use in applications such as RF amplifiers, low noise amplifiers, mixers, and oscillators. This device has a fast switching time of 570 ns, a maximum collector-emitter voltage of 45 volts, and a maximum frequency of operation of up to 700 MHz. It also has an excellent linearity, with an input current gain of approximately 100.
The specific data is subject to PDF, and the above content is for reference
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