
Allicdata Part #: | BFR360FE6327TR-ND |
Manufacturer Part#: |
BFR 360F E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 6V TSFP-3 |
More Detail: | RF Transistor NPN 9V 35mA 14GHz 210mW Surface Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 9V |
Frequency - Transition: | 14GHz |
Noise Figure (dB Typ @ f): | 1dB @ 1.8GHz |
Gain: | 15.5dB |
Power - Max: | 210mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 15mA, 3V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | PG-TSFP-3 |
Base Part Number: | BFR360 |
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The BFR 360F E6327 is a type of transistor used for radio frequency (RF) applications. It is a bipolar junction transistor (BJT), an amplifier used in radio frequency circuits. This type of transistor consists of two junctions, a base and an emitter, and the collector. It is used to amplify radio frequency signals and is an alternative to field effect transistors (FETs). The BFR 360F E6327 has a wide range of applications, including radio receivers, transmitters, amplifiers and oscillators, and mobile communication systems.
The working principle of the BFR 360F E6327 is based on the concept of electron transport across its two junctions. When a radio frequency signal is applied to the base of the transistor, a small current is induced in the base, which in turn causes current to flow through the collector and emitter. This current is then amplified by the transistor and the resulting output signal is of greater magnitude than the input signal. The amount of amplification is dependent on the design of the transistor and the operating conditions.
The BFR 360F E6327 has a wide range of advantages when compared to FETs. These advantages include its relatively low cost, high frequency operation and wide range of applications. It also has fast switching times and a low noise figure, which make it suitable for use in sensitive applications such as medical imaging. The BFR 360F E6327 is relatively simple to manufacture and is therefore relatively inexpensive to produce. Additionally, it is durable and can last for many years in harsh environments.
The BFR 360F E6327 is used for a wide range of applications. It is suitable for use in radio receivers and transmitters, amplifiers and oscillators, mobile communication systems and medical imaging systems. It can also be used in other RF systems such as WiFi, Bluetooth and satellite communications. The BFR 360F E6327 is a versatile transistor, capable of providing excellent performance in a wide range of applications.
In conclusion, the BFR 360F E6327 is an excellent choice for radio frequency (RF) applications. It is a versatile transistor, capable of providing excellent performance in a wide range of applications. Its advantages include its relatively low cost, high frequency operation and wide range of applications. Additionally, it is durable and can last for many years in harsh environments. The BFR 360F E6327 is used for a wide range of applications, including radio receivers, transmitters, amplifiers, oscillators, and mobile communication systems.
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BFR183WH6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | TRANS RF NPN 12V 65MA SOT... |
BFR22-19P | ITT Cannon, ... | 0.0 $ | 1000 | ER 14C 14#16 PIN RECP JAM |
BFR32-2010-10S1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 54C 54#16 SKT RECP JAM |
BFR22-7P-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 1C 1#0 PIN RECP JAM |
BFR1-BW1 | Honeywell Se... | 36.08 $ | 1000 | ENCL SWES BFWOBBLE COIL S... |
BFR28A51P3-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 43C 43#16 PIN RECP |
BFR12SA10S-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 4C 4#16S SKT RECP |
BFR31LT1G | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 225MW SOT23JFET... |
BFR 182W E6327 | Infineon Tec... | 0.0 $ | 1000 | TRANSISTOR NPN RF 12V SOT... |
BFR28-9S-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 12C 6#16 6#12 SKT RECP |
BFR36-5P-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 4C 4#0 PIN RECP |
BFR36A46P1F80 | ITT Cannon, ... | 0.0 $ | 1000 | ER 27C 27#12 PIN RECP JAM |
BFR31,235 | NXP USA Inc | 0.14 $ | 1000 | JFET N-CH 10MA 250MW SOT2... |
BFR92A,215 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 25MA 15V 5GHZ S... |
BFR-12S-3P-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 2C 2#16S PIN RECP JAM |
BFR12S-3SX-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 2C 2#16S SKT RECP JAM |
BFR28-21P-1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 37C 37#16 PIN RECP JAM |
BFR28A51P-1F80 | ITT Cannon, ... | 0.0 $ | 1000 | ER 43C 43#16 PIN RECP |
BFR31,215 | NXP USA Inc | 0.15 $ | 3000 | JFET N-CH 10MA 250MW SOT2... |
BFR 183W E6327 | Infineon Tec... | 0.0 $ | 1000 | TRANSISTOR NPN RF 12V SOT... |
BFR22-11S1 | ITT Cannon, ... | 0.0 $ | 1000 | ER 2C 2#16 SKT RECP JAM |
BFR36-5S-A206 | ITT Cannon, ... | 0.0 $ | 1000 | ER 4C 4#0 SKT RECP |
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