BLP7G07S-140PY Discrete Semiconductor Products

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The BLP7G07S-140PY is a modern semiconductor device used in a wide range of high frequency applications. It is an enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for portable (low-power) RF and microwave applications. It has a small surface mount case and can be integrated into a wide range of circuit designs, such as PA arrays, switching matrices and small signal amplifiers.

GaN HEMTs represent the state-of-the-art in RF and microwave semiconductor technology. They offer several advantages over traditional silicon technology, including high device performance, high breakdown voltages, low on-resistance, small parasitic capacitances, and good thermal stability. The BLP7G07S-140PY is optimized for use in low power devices, such as 24 GHz WDFN-4 Package and as part of multi-stage low noise amplifiers. The device is rated for an operating voltage range of 7V to 28V and an input/output impedance of 50 GHz.

The BLP7G07S-140PY operates in an enhancement mode. This means that when biased at low voltage and operating at the correct current, it will amplify signal power. The device has a push-pull output structure, meaning that it has two channels, one for the input signal and another for the output signal. The signal is fed into the device through the gate terminal and is transferred to the source. The signal is then transferred to the drain terminal using the device’s internal capacitance. The output is then achieved as the combination of the channel currents. This type of structure helps to reduce the parasitic capacitances seen in many single channel transistors.

Due to the high bandwidth and low noise figures, the BLP7G07S-140PY is ideal for a wide range of applications, including wireless communications, military and commercial avionics, automotive, optical networking and data storage, ultra-wideband (UWB) applications, and more. The device is also used in commercial applications for broadcasting, cable, satellite and terrestrial cellular systems, antenna systems and in-building fiber optics. The device provides good linearity and high gain, making it well suited for use as PA’s and driver amplifiers.

The BLP7G07S-140PY is a semiconductor designed specifically for high performance at low power. It is a GaN HEMT in an enhancement mode with a push-pull output structure, providing a wide range of benefits compared to conventional silicon devices. The device is rated for an operating voltage range of 7V to 28V and an input/output impedance of 50 GHz and is suitable for a variety of applications, including wireless communications, military and commercial avionics, automotive and more.

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