BLP7G07S-140P,118

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The BLP7G07S-140P,118 is a high-power radio frequency (RF) transistor, primarily used in applications such as broadcast transmitters, amplifiers, and cellular communications. It is a high power, gallium arsenide field effect transistor (GaAs FET). It is designed for use in the high frequency, high power amplifiers of radio, television, and communications systems. The device incorporates a gate, an emitter, and a drain structure, with an inner gate contact resistance of less than 1.5 ohms.

The BLP7G07S-140P,118 is rated for a maximum power output of 220 watts and has a drain voltage of 14 volts. It is designed to operate over a frequency range from 2.0 GHz to 3.2 GHz. The device features a minimum noise figure of 8.5 dB and a maximum gain of 10 dB. It is designed for linear operation and has a low distortion performance when operated in the passband region.

The BLP7G07S-140P,118 combines several features that make it ideal for use in radio frequency applications. Its low package loss results in high efficiency, while its high power output capability, low noise figure, and high gain offer a high level of performance. It also features an integrated gate resistor, allowing for improved protection against thermal runaway in the gate voltage.

The working principle of the BLP7G07S-140P,118 is based on field effect transistor (FET) technology. This type of technology uses an electric field to control the movement of electrons between a source and a drain, allowing for a high level of control over the current flow. The device operates as a standard FET, in which a small voltage applied to the gate enables current to flow between the source and drain. The GaAs material of the BLP7G07S-140P,118 adds an additional level of control over the current flow, allowing for the device to be operated with high linearity.

The BLP7G07S-140P,118 is an ideal choice for a variety of high-power, radio frequency applications. Its high power capabilities, low noise figure, and high linearity make it an excellent option for transmitters, amplifiers, and cellular communications applications. Additionally, its integrated gate resistor offers improved protection against thermal runaway, ensuring reliable operation of the device.

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