BLP7G22-10,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	700MHz ~ 2.2GHz
Gain:	27dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	110mA
Power - Output:	2W
Voltage - Rated:	65V
Package / Case:	12-VDFN Exposed Pad
Supplier Device Package:	12-HVSON (6x5)
Base Part Number:	BLP7G22

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLP7G22-10,135 Transistors-FETs, MOSFETs-RF Application Field and Working PrincipleThe BLP7G22-10,135 is a type of field-effect transistor (FET) that is commonly used in radio frequency (RF) circuit designs. It is a GaN MOSFET, meaning that it has a high density of electron mobility, and it is able to switch quickly (in the tens of nanoseconds range) to efficiently operate in circuits where high-frequency (over 1GHz) operations are required. In this article, we will discuss the application field and working principle of the BLP7G22-10,135 FET.Application FieldThe BLP7G22-10,135 FET is typically used in high-frequency, high-power circuits due to its fast switching characteristics and high electron mobility. This type of device is often used in applications such as transmitters, receivers, radars, satellite communication systems, and waveform synthesisers. Additionally, this type of transistor can also be used in high-frequency oscillator and amplifier circuits, as well as for power switching and rectifier circuits.Due to the fact that the BLP7G22-10,135 transfers power at higher frequencies than conventional transistors, the device can significantly reduce the size of the circuit, while still delivering the same power output. By incorporating this transistor, circuit designers can free up more component space, reduce heat dissipation, and ultimately improve the efficiency of the whole circuit design.Working PrincipleThe BLP7G22-10,135 MOSFET works on the principle of electrostatic control, in which the gate voltage controls the current flow between the source and drain electrodes. This can be further explained using the following two states that the device operates in:“On” StateIn this state, the gate voltage is increased, and a small depletion layer forms near the source-drain junction. This reduces the resistance between the source and drain, allowing an increased current flow. This can be achieved by applying a positive voltage to the gate terminal.“Off” StateWhen the gate voltage is decreased, the depletion layer near the source-drain junction increases, which also increases the resistance between the source and drain, leading to a decreased current flow. This is achieved by applying a negative voltage to the gate terminal.The BLP7G22-10,135 is a low-power MOSFET, meaning it can only operate with low levels of current (up to 1A at up to 5V). The device also has a fairly low ON resistance of 3.5 ohms, and an OFF state leakage current of up to 20mA.ConclusionThe BLP7G22-10,135 is a radio frequency transistor that is commonly used in high-frequency circuits. It works on the principle of electrostatic control, in which the gate voltage is used to control the current flow between the source and drain. This device is typically used for applications such as transmitters, receivers, radars, satellite communication systems, and waveform synthesisers, due to its fast switching characteristics and high electron mobility. It is also favoured for its low power requirements, low ON resistance, and low OFF state leakage current.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description