BLP7G22-05Z

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BLP7G22-05Z is an RF (Radio Frequency) MOSFET (Metal Oxide Field Effect Transistor) designed and manufactured by Bruce Electronic Technology. This N-Channel enhancement type MOSFET is made with high-performance Trench-Geometry technology and built using advanced precise processing technologies, providing superior performance and making this transistor suitable for a broad range of applications.

The BLP7G22-05Z provides high performance and robustness in a variety of scenarios, such as in RF amplifiers, RF mixers and RF switching. With a high frequency transistor, users will benefit from enhanced gain, improved efficiency, lower noise, and improved intermodulation performance.

The drain-source voltage of the BLP7G22-05Z is 30V and it has a drain current of 5A, enabling it to be used in higher power applications. It also has an exceptional breakdown voltage rating of 600V and can provide excellent RF performance up to 5GHz. This MOSFET also has a fast switching speed of 10ns and is designed with a low gate-to-drain capacitance, which makes it suitable for linear applications.

The BLP7G22-05Z features an LDMOSTM (Low Drain-Source On-Resistance) structure which provides superior performance across the entire frequency range. This device is also highly reliable and boasts superior on-state resistance and capacitance. Additionally, it provides excellent scalability and thermal performance with an extremely low on-resistance-density.

The operation of a MOSFET, like the BLP7G22-05Z, is based on the principle of an open source-drain field-effect configuration. This allows a semiconductor layer to be established, where the semiconductor layer acts as an electrical switch that can be controlled by an external voltage. The semiconductor layer is situated between the source and drain, and when forward-biased, the chips in the semiconductor layer start to conduct current.

The BLP7G22-05Z is a very powerful MOSFET, designed for use in a variety of radio frequency applications. It has a low on-resistance, low capacitance and an impressive drain breakdown voltage making it perfect for RF amplifiers, RF mixers, RF switches and linear RF applications. It\'s also highly reliable and offers excellent scalability, thermal performance and fast switching speed.

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