BQ4014YMB-120

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As an important component of the computer electronic component, memories are widely used in various electronic systems to provide data and instruction storage functions. BQ4014YMB-120 is a memory component developed by Texas Instruments. The component enables a wide range of applications in various systems with its advantages such as low power consumption, fast speed and highly reliable storage.

Product Overview

The BQ4014YMB-120 component is a non-volatile static RAM (SRAM) which is designed to deliver a high-speed and robust storage solution. Its 16Kx8 memory allows users to store up to 128Kbits of data. It uses the industry-standard 20-pin TSSOP package and operates at a low voltage range of 2.3V to 5V. The component also offers a fast operating speed of up to 55ns providing a very fast and efficient data access. The device is also available in a commercial and industrial temperature range.

Product Characteristics

The BQ4014YMB-120 component is designed to be more power-efficient than other memories which have similar performance. It utilizes built-in power down features to reduce power consumption. It also features two pins which are dedicated for detecting device temperature and frame refresh to ensure long-term reliability. It also features an automatic data refresh which helps to ensure data integrity during normal operation.

Product Advantages

The BQ4014YMB-120 component provides a high density, low power and highly reliable storage solutions for a wide range of applications. Its high-speed operation combined with its two-pin temperature supervision and frame refresh features ensure long-term data integrity. Its built- in power down features enable more power efficiency than other memory components which have similar performance.

Applications

The BQ4014YMB-120 is a widely used memory component due to its advantages such as low power consumption and highly reliable storage. It is widely used in various memory applications such as coin cell battery powered medical devices, embedded automotive systems, industrial network and industrial monitoring systems. It is often used as a main memory or a back-up memory to provide data protection during power failures.

Working Principle

The working principle of the BQ4014YMB-120 component is based on the use of non-volatile SRAM. Non-volatile SRAM is designed using two transistors which are arranged in a cross-coupled configuration. A logic gate is also used to control the writing and reading of data from the memory. During normal operation, the logic gate outputs two signals which control the state of the two transistors. When the logic gate outputs a low signal, the two transistors are opened and information is written into the memory. When the logic gate outputs a high signal, the two transistors are closed and the information stored in the memory is read out. During power down mode, the detected temperature and frame refresh enables the memory to refresh itself to ensure data integrity and prevent memory loss.

The specific data is subject to PDF, and the above content is for reference