Allicdata Part #: | BR93G76FVM-3GTTR-ND |
Manufacturer Part#: |
BR93G76FVM-3GTTR |
Price: | $ 0.15 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K SPI 3MHZ 8MSOP |
More Detail: | EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz ... |
DataSheet: | BR93G76FVM-3GTTR Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.12993 |
6000 +: | $ 0.12312 |
15000 +: | $ 0.12099 |
30000 +: | $ 0.11812 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8, 512 x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
Supplier Device Package: | 8-MSOP |
Base Part Number: | BR93G76 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory technology is ever-evolving and its applications remain highly varied. The BR93G76FVM-3GTTR is a product of the latest advancements in memory technology, offering superior performance and a wide range of potential uses. Its application field and working principle is reviewed in this article.
The BR93G76FVM-3GTTR is a product optimized for high-performance synchronous and parallel memory architecture. Its support for multiple simultaneous streams, embedded error correction and other advanced features makes it suitable for use in a variety of different applications. Its advanced memory hierarchy, distributed caching algorithms, and wide range of refresh options enable it to offer superior performance.
The BR93G76FVM-3GTTR is designed to be used in consumer electronics, mobile phones, military and aerospace applications, among many others. One particular application in which the BR93G76FVM-3GTTR excels is low power computing. Its low power operation and wide range of compatible components make it a perfect choice for digital consumer devices in the market today.
The core working principle of the BR93G76FVM-3GTTR is based on a Dynamic Random Access Memory (DRAM) architecture. This type of architecture is characterized by a very high access time, meaning that the memory is accessed multiple times during a single cycle. The overall effect of this is that data can be written and read back much faster than with traditional RAM configurations.
The DRAM architecture is further complemented by a series of associated technologies. This includes an array of GRAM modules, which stand for Grid RAM. These modules feature efficient and powerful multitasking capabilities, while also providing an enhanced ability to maintain data integrity. Additionally, the BR93G76FVM-3GTTR supports memory interleaving, which allows for the combination of multiple memory portions into one large memory area.
The BR93G76FVM-3GTTR also supports multi-channel data flow and advanced error correction techniques, which further enhance the device’s performance and reliability. In addition, the device supports Self Refresh, which prolongs the life of the memory, reduces power consumption and prevents data loss due to power outages.
Finally, the BR93G76FVM-3GTTR also features an advanced signaling system, which provides a pathway for data to be read and written directly to the DRAM. This results in faster and more efficient performance, with minimal interference from other components or systems.
The BR93G76FVM-3GTTR is a powerful and versatile memory solution, offering superior performance and a wide range of potential uses. Its multiple advanced features and technologies make it an ideal choice for many different types of applications, and the high level of quality and reliability makes it suitable for a wide range of consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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