BR93G76FVJ-3GTE2 Allicdata Electronics
Allicdata Part #:

BR93G76FVJ-3GT2TR-ND

Manufacturer Part#:

BR93G76FVJ-3GTE2

Price: $ 0.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 8K SPI 3MHZ 8TSSOP
More Detail: EEPROM Memory IC 8Kb (1K x 8, 512 x 16) SPI 3MHz ...
DataSheet: BR93G76FVJ-3GTE2 datasheetBR93G76FVJ-3GTE2 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.12647
5000 +: $ 0.11617
12500 +: $ 0.11416
25000 +: $ 0.11145
Stock 2500Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8, 512 x 16)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ
Base Part Number: BR93G76
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Modern storage technology has seen vast improvement since the advent of computer technology in the 1940s. Today, memory is an essential element in an array of applications, from non-volatile memory (NVMe) used in enterprise, personal and telecom applications, to an array of different types of volatile memory (DRAM) used in gaming, embedded and digital electronics. One of the most recent developments in memory technology is the BR93G76FVJ-3GTE2 memory, which is designed to store data in a reliable and fast fashion. This article will discuss the application field and working principle of the BR93G76FVJ-3GTE2 memory.

Overview of BR93G76FVJ-3GTE2 Memory

BR93G76FVJ-3GTE2 memory is designed to store data reliably and quickly. It is an advanced form of DRAM (dynamic random access memory) that has the ability to store and recall data at extremely high speeds. It can process commands in a fraction of a second and is capable of supporting multiple channels for simultaneous read and write operations. In addition, it can store up to 32 gigabytes (GB) of data, making it ideal for a variety of applications.

The BR93G76FVJ-3GTE2 memory is designed to provide high performance and reliability. Its multi-level cell (MLC) architecture allows for higher transfer rates and better performance than other types of memory. Additionally, its error-correction code (ECC) and error-correcting code/CRC (ECCC) technologies improve data integrity and protect against data corruption. Furthermore, the BR93G76FVJ-3GTE2 memory is capable of self-refreshing and power loss protection.

Application Fields for BR93G76FVJ-3GTE2 Memory

The BR93G76FVJ-3GTE2 memory is suitable for a variety of applications, including gaming, cloud computing, and industrial applications. Due to its high speed, it is ideal for gaming applications, as it can provide quick responses to commands and reduce input lag. Furthermore, its large capacity makes it suitable for cloud computing applications, as it can store large amounts of data on its own without the need for additional storage.

In addition, the BR93G76FVJ-3GTE2 memory is ideal for industrial applications, as it can provide the necessary speed and accuracy to process data in real-time. Furthermore, its error-correction and self-refreshing technologies ensure the integrity and safety of the data it stores. It is also ideal for applications that require a high level of security, as the memory can encrypt data and protect it from unauthorized access.

Working Principle Of BR93G76FVJ-3GTE2 Memory

The BR93G76FVJ-3GTE2 memory works by storing and retrieving data quickly and reliably. It is a multi-level cell design, which allows for fast read and write speeds for data storage and retrieval. Additionally, it utilizes error-correction and self-refreshing technologies to ensure the integrity of the data stored.

The BR93G76FVJ-3GTE2 memory is designed to operate in two different modes, single-ended and differential. In single-ended mode, the data is stored in a single direction. This mode is mainly used for low-speed applications, such as the storage of small files. On the other hand, the differential mode is used for higher speeds, as it stores data in both directions simultaneously.

The BR93G76FVJ-3GTE2 memory utilizes an advanced connection system to reduce latency. This system allows the memory to recognize commands quickly and respond to them without delay. Additionally, it can support multiple channels for simultaneous read and write operations, allowing for high-speed operation.

Conclusion

In conclusion, the BR93G76FVJ-3GTE2 memory offers a reliable, fast and secure data storage solution for various applications. Its multi-level cell design and error-correcting and self-refreshing technologies ensure the integrity of data stored. Additionally, its advanced connection system and support for multiple channels allow for higher speeds and greater performance. The BR93G76FVJ-3GTE2 memory is ideal for a variety of applications, from gaming to industrial use.

The specific data is subject to PDF, and the above content is for reference

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