BR93L46F-WE2 Allicdata Electronics
Allicdata Part #:

BR93L46F-WE2TR-ND

Manufacturer Part#:

BR93L46F-WE2

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K SPI 2MHZ 8SOP
More Detail: EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-SOP
DataSheet: BR93L46F-WE2 datasheetBR93L46F-WE2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Base Part Number: BR93L46
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

BR93L46F-WE2 is a type of memory from Toshiba Corp. It is a new class of memory technology devices. Its features include large storage capacity, low power consumption, and high reliability. The memory devices are primarily used for memory-intensive applications such as digital signal processors (DSPs), digital cameras, and mobile applications.

Application Field

BR93L46F-WE2 can be used in a variety of applications that require large amounts of fast and reliable storage. Examples include digital signal processors (DSPs), digital cameras, large scale data processing, mobile application platforms, and embedded system applications. The memory is designed to be integrated into systems that require large amounts of data storage and processing. The memory can also be used for data logs and system monitoring applications.

Working Principle

BR93L46F-WE2 is based on the low power 20nm STT-MRAM technology. This technology allows the device to be used as a non-volatile memory device. The non-volatility of the device means that it can retain data even when there is a loss of power. The memory is designed so that it can maintain a low power draw even during periods of intensive use. The memory has an optimized architecture for fast data access and can support up to 100MHZ of speed.

The memory has an 8kb page size and a 512Mb storage capacity. It also features a two-plane, three-dimensional architecture that is optimized for fast data access and high performance. The device has a high level of endurance and is capable of writing 2.2Mb/s or 128,000 write cycles.

Conclusion

In conclusion, BR93L46F-WE2 is a type of memory from Toshiba Corp designed for low power and high performance applications. The memory is based on the new low power 20nm STT-MRAM technology, which allows the device to be used as a non-volatile memory device. It has an 8kb page size and a 512Mb storage capacity and is capable of writing 2.2Mb/s or 128,000 write cycles. The memory is designed to be integrated into systems that require large amounts of data storage and processing. It can be used in a variety of applications, including digital signal processors (DSPs), digital cameras, large scale data processing, mobile application platforms, and embedded system applications.

The specific data is subject to PDF, and the above content is for reference

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