BR93LC46F-WE2

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (64 x 16)
Clock Frequency:	1MHz
Write Cycle Time - Word, Page:	10ms
Memory Interface:	SPI
Voltage - Supply:	2 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	BR93LC46

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Memory

BR93LC46F-WE2 is a 1K-bit or 2K-bit serial EEPROM utilizing Macronix\'s advanced CMOS technology. This device is manufactured using Macronix\'s 1.8V power supply technology. The products consist of an 8-pin plastic small-outline package, enabling these devices to be used in applications where circuit-board space is at a premium, such as in network cards, flat panel monitors, and consumer electronics.

Application Field:

BR93LC46F-WE2 is suitable for various kinds of applications. It is widely used in consumer electronics, flat panel monitors, network cards, medical equipment, automotive and telephone cards and other digital products. It is especially suitable for applications that require low power consumption, and high integration and portability. As other EEPROMs, BR93LC46F-WE2 has strong work performance in data storage and retrieval.

Working Principle:

The working principle of BR93LC46F-WE2 is based on two principles, the Fowler-Nordheim tunneling effect and hot carrier injection. Fowler-Nordheim tunneling effect is a physical phenomenon in which electrons are tunneled through a thin oxide layer to form "contact" or "trap" states in the silicon junction layer beneath the oxide layer. These electrons can then be read out using a low-voltage source, such as a low-power source. Hot carrier injection, on the other hand, implies that electrons are injected into the junction layer of a memory cell, creating a "charge trapping" state which is more energy efficient than Fowler-Nordheim tunneling.As a result, the device uses both Fowler-Nordheim tunneling and hot carrier injection to perform write and erase operations. The device supports a write cycle time of 5 ms and an erase cycle time of 10 ms. It also offers a Data Retention Endurance of 10 years.In terms of data security and reliability, BR93LC46F-WE2 also offers a variety of safeguards. It is capable of detecting external interference or faulty data and initiating a self-reset cycle. In addition, the device is equipped with write protect and erase protect pins that can prevent accidental writes and erases.

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