BR93L66-W

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The BR93L66-W is a static random access memory (SRAM) device with a typical access time of 75ns. This device is fully static, meaning that it doesn\'t require any clock or power cycling to maintain data, unlike dynamic random access memory (DAM) devices, making it ideal for low power systems. The BR93L66-W is a 32Kx16bit configuration and includes a 130-byte write protection buffer, allowing it to be used in security applications and other applications that require tight control on data integrity. The device also includes a parity detect feature, allowing it to detect single bit errors.

Application Field

The BR93L66-W is optimized for embedded systems, such as consumer electronics, medical systems, data logging and control systems. It is particularly well suited for battery powered and low power applications where long battery life and low power consumption is important. The 130-byte write protection buffer and parity error detect features allow it to be used for data integrity and security applications.

Working Principle

The BR93L66-W is a static random access memory (SRAM) device. Like DRAM devices, SRAM uses a network of capacitor and transistors to store each bit of data. Unlike DRAM which has to be refreshed continuously, SRAM is static, meaning that it doesn’t require power cycling or a clock to maintain data. This makes it ideal for low power applications, as it can operate down to 1.6V with a single power supply. The BR93L66-W stores up to 32K 16-bit words and its registers can be read or written in one cycle. It includes a 130-byte write protection buffer and a parity error detect feature to ensure data integrity and security.

The BR93L66-W operates in 3.3V with a single power supply. It features an asynchronous write-back buffer and the programmable read cycle time is adjustable from 75ns to 120ns. The BR93L66-W can operate at any voltage between 1.6V and 3.6V and its input/output ports are 3.0V logic compatible. Additionally, the device includes a low power-stop mode, allowing the device to be powered down between reads and writes in order to conserve power.

The device provides an enhanced level of data protection against inadvertent writes. The secure write feature requires a three stage write operation. First, the command is written to the write-protect register. The write-enable command is then written to the memory and the data is written to the specified address. This three stage process can prevent accidental or malicious writes. In addition, the device also features parity error detection and an automatic write-back buffer flush when in low power-stop mode.

Conclusion

The BR93L66-W is a static random access memory (SRAM) ideal for low power applications. It can operate down to 1.6V and includes a 130-byte write-protection buffer and a parity error detect feature to ensure data integrity and security. It is well suited for embedded systems, such as consumer electronics, medical systems, data logging and control systems. The secure write feature, low power-stop mode, and adjustable read cycle time make it a great choice for data protection and low power applications.

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