Allicdata Part #: | BR93L56RFJ-WE2TR-ND |
Manufacturer Part#: |
BR93L56RFJ-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 2K SPI 2MHZ 8SOPJ |
More Detail: | EEPROM Memory IC 2Kb (128 x 16) SPI 2MHz 8-SOP-J |
DataSheet: | BR93L56RFJ-WE2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Base Part Number: | BR93L56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR93L56RFJ-WE2 memory, originally known as Welding Read/Program Entry Memory or WRPEM, is also referred to as a Ferroelectric Random Access Memory or FRAM. FRAMs are nonvolatile memory integrated circuits that offer fast access to stored data, similar to traditional RAM. With FRAMs, the data stored in memory is not lost when power is switched off and is particularly well-suited for applications in which both a moderate amount of memory and a frequent write capability is desired.
One of the main advantages of BR93L56RFJ-WE2 is its fast access time. On average, it takes only 15ns to access a single location in the FRAM, as compared to 3-6 ms in flash memory. Furthermore, the time to write data to the FRAM is very short, usually taking less than 50µs. With these impressive speeds, BR93L56RFJ-WE2 memory is particularly useful in applications where fast data read/write access is essential.
BR93L56RFJ-WE2 also has far greater write endurance than traditional flash memories. Its write endurance is so high that it is often considered a nonvolatile memory, as the data stored in it will not be erased or corrupted by sudden power fluctuations or outages. In addition, the data stored in it can be utilized over a wide voltage range from 5V down to 1.2V, making it ideal for portable or handheld devices.
The working principle of BR93L56RFJ-WE2 based FRAMs is relatively simple. When a voltage is applied across the gate oxides of a ferroelectric material, charge carriers are trapped and stored between the two electrodes. When these trapped charge carriers come in contact with a read/write signal, they are read or written to the memory cell. The stored charge carriers can also be modified by applying a certain polarity of voltage to the gate oxide. This change in the stored charge carriers is then stored in the memory cell until the next read/write signal is applied.
Owing to its high speed, excellent write endurance, and wide voltage range, BR93L56RFJ-WE2 memory can be found in a wide variety of applications, including medical devices, automotive systems, industrial controllers, and even toys. Therefore, BR93L56RFJ-WE2 can be used in virtually any application where speed and endurance are important factors.
The specific data is subject to PDF, and the above content is for reference
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