BR93G86NUX-3BTTR Integrated Circuits (ICs) |
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Allicdata Part #: | BR93G86NUX-3BTTR-ND |
Manufacturer Part#: |
BR93G86NUX-3BTTR |
Price: | $ 0.15 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K SPI VSON008X2030 |
More Detail: | EEPROM Memory IC 16Kb (1K x 16) SPI 3MHz VSON008X... |
DataSheet: | BR93G86NUX-3BTTR Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.13708 |
8000 +: | $ 0.13405 |
12000 +: | $ 0.13172 |
28000 +: | $ 0.12860 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (1K x 16) |
Clock Frequency: | 3MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-UFDFN Exposed Pad |
Supplier Device Package: | VSON008X2030 |
Base Part Number: | BR93G86 |
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Memory: BR93G86NUX-3BTTR Application Field and Working Principle
BR93G86NUX-3BTTR is an integrated module developed by Renesas. It is a 4-megabit dynamic random access memory (DRAM) device that uses 3.2 volts of power, and is most commonly used in automotive applications. The BR93G86NUX-3BTTR also offers improved performance compared to its predecessors.
Application Field
The BR93G86NUX-3BTTR is mainly used in automotive applications, such as engine control, automotive navigation, and vehicle multimedia systems. The high-speed characteristics of the BR93G86NUX-3BTTR, along with its competitive cost, makes it an ideal candidate for automotive applications. It is also used in industrial and instrumentation applications, such as communications equipment and instrumentation systems.
The BR93G86NUX-3BTTR is specifically designed for the automotive environment, offering improved reliability, temperature resistance and endurance. Its low voltage allows for a low power consumption and reduced EMI noise, which is necessary for an automotive system.
Working Principle
The BR93G86NUX-3BTTR utilizes a synchronous DRAM technology, which allows for high-speed data transfer when compared with asynchronous DRAM technology. The internal architecture of the device consists of a memory array, sense amplifiers, a column address buffer, and a row address buffer. It also features independent row and column RD/WR ports and separate address and data buses.
The device is able to access data by applying row and column address signals, which are decoded and stored by the device. When the data is accessed, a sense amplifier amplifies the read signals to the appropriate voltage level, and the data is then transferred to an output buffer from which it can be accessed.
The device also contains an internal calibration circuit and a low-voltage sensing circuit, which ensures that the device will operate properly within the specified voltage range. It also has built-in self-refresh circuitry to help reduce power consumption when the device is idle.
Conclusion
The BR93G86NUX-3BTTR is a highly reliable and cost-effective DRAM device that is ideal for use in automotive, industrial, and instrumentation applications. Its features, such as low power consumption and noise level, make it an attractive choice for use in these environments. Furthermore, its synchronous DRAM technology allows it to operate at high speeds, making it an excellent choice for high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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