BSC200P03LSGAUMA1

Vgs(th) (Max) @ Id:	2.2V @ 100µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2430pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	48.5nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	20 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.9A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSC200P03LSGAUMA1 Application Field and Working Principle

The BSC200P03LSGAUMA1 is a high-current dual power MOSFET from STMicroelectronics. This MOSFET device is suitable for applications with high data switching speed requirements, and features low gate-charge and superior 2nd breakdown characteristics. It is available in a P-Channel Logic Level package, and it is optimized for low gate-source voltage VGS(th) range.

Applications

The BSC200P03LSGAUMA1 is mainly used as a power switch in load switching applications. This MOSFET can also be used to control current flow in applications such as switching power supplies, AC and DC motor controllers, brushed motors, and other current-controlled circuits. It has a high switching speed, enabling it to operate efficiently in rapid power switching applications.

Working Principle

The BSC200P03LSGAUMA1 is a dual power MOSFET. It has a voltage tolerance range that allows it to control both high and low voltage sources. This MOSFET works by controlling the flow of current through a semi-conductor material, which allows it to switch between two states: ON and OFF.When the MOSFET is in the ON state, there is a voltage between the gate and source terminals. This voltage forces the material to form a "channel," which allows electrons to flow freely between the source and drain terminals, thus creating an electric current.When the voltage between the gate and source terminals is reduced or reversed, the current flow is reduced or stopped, thus turning the MOSFET OFF. This process is known as drain-source breakdown.

Advantages

Compared to other components such as transistors, the BSC200P03LSGAUMA1 offers several advantages. First, it has a low gate-charge. This means that the gate-charge energy required to open the gate voltage is low, thereby reducing power consumption and consequently, operating temperature.Second, the BSC200P03LSGAUMA1 has superior 2nd breakdown characteristics. This means that the device is capable of handling higher voltages and currents without the risk of damage or failure.Third, the MOSFET offers a low on-resistance, which is beneficial in low-power applications. This resistance can be used to control current and thus, regulate the amount of power consumed.Finally, the device is able to switch quickly between the ON and OFF states. This enhances the performance of the device in rapid power switching applications such as motor controllers, brushed motors, and switching power supplies.

Conclusion

The BSC200P03LSGAUMA1 is a high-current dual power MOSFET from STMicroelectronics. It is suitable for applications with high data switching speed requirements and features low gate-charge and superior 2nd breakdown characteristics. Its applications include load switching, switching power supplies, AC and DC motor controllers, and brushed motors. It works by controlling the flow of current between the source and drain terminals, and its advantages include a low gate-charge, high-voltage and current tolerance, low on-resistance, and quick switching speed.

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