| Allicdata Part #: | BSC240N12NS3GTR-ND |
| Manufacturer Part#: |
BSC240N12NS3 G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 120V 37A 8TDSON |
| More Detail: | N-Channel 120V 37A (Tc) 66W (Tc) Surface Mount PG-... |
| DataSheet: |  BSC240N12NS3 G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 35µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 66W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 60V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 31A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
| Drain to Source Voltage (Vdss): | 120V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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BSC240N12NS3 G is a metal-oxide-semiconductor field-effect transistor (MOSFET) with an isolated drain connection. MOSFETs are unipolar devices which typically provide an on/off switching action in the form of an electrical switch. BSC240N12NS3 G is a single, high-gain device and has a very low on-resistance which makes it especially suitable for applications where power efficiency and low power loss are paramount.
BSC240N12NS3 G has a maximum drain current of 30 amperes and a drain-source breakdown voltage of 600 volts. It is also capable of operating at temperatures up to 145°C, making it suitable for high-temperature applications. The device also offers a wide range of gate voltages and is capable of operating at low voltages. This makes it suitable for battery powered applications.
The working principle of BSC240N12NS3 G is based on a three-terminal structure known as “source”, “gate” and “drain”. When the gate is positively charged, the drain terminal opens and electrons move from the source terminal to the drain. This flow is known as “punch-through” effect and it is responsible for the overall performance and power efficiency of the MOSFET.
BSC240N12NS3 G has many applications including DC-DC converters, power amplifiers and battery chargers. It can also be used as a replacement for other MOSFETs in existing power supply circuits. The device’s low on-resistance makes it a suitable choice for high power, switch mode applications. The device is also ideal for applications requiring high switching frequency such as frequency synthesizers and motor drives.
In conclusion, BSC240N12NS3 G is an ideal choice for applications where power efficiency, low on-resistance, high current and high breakdown voltages are essential. Its versatility makes it suitable for a wide range of power management and switch mode applications.
The specific data is subject to PDF, and the above content is for reference
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