BSC22DN20NS3GATMA1

Vgs(th) (Max) @ Id:	4V @ 13µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	34W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	430pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.6nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	225 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

BSC22DN20NS3GATMA1 is an N-channel metal oxide semiconductor field-effect transistor (MOSFET) used in switching and amplification applications. The transistor has an implanted drain to improve the forward transfer characteristics of the whole circuit. BSC22DN20NS3GATMA1 is available in both through-hole (TH) and surface-mount (SM) packages, both of which have an industry standard size.

Technical Specification

The technical specifications of BSC22DN20NS3GATMA1 are as follows:• Maximum Drain-Source Voltage (VDS): 800V • Maximum Gate-Source Voltage (VGS): 20V • On-Region Drain Current (ID): 14A • Drain-Source On-Resistance (RDS(on)): <1.2Ω • Maximum Operating Temperature (TJ): 175 • Turn-On Delay Time (td(on)): 500ns • Turn-Off Delay Time (toff): 50ns • Package: TO-220/SMD • Transistor Type: N-Channel MOSFET

Application Fields and Working Principle

BSC22DN20NS3GATMA1 is applied in various applications, ranging from motor control circuits to motor drives, high-speed switching, synchronous rectification, power electronic inverters, high-frequency power converters and high-power amplifier circuits. Basically, the MOSFET works by utilizing the electric field phenomenon of a capacitor. When a gate voltage is applied to the transistor, the electrons in the gate oxide layer move to the drain, due to the electric field. This causes a positive charge on the gate side and a negative charge on the drain side. This creates a potential barrier between the source and drain, and the current does not flow through the transistor until the voltage across the transistor exceeds the threshold voltage. When the drain-source voltage (VDS) is greater than the threshold voltage, the electric field between the source and drain gets stronger and the current starts to flow. With regards to BSC22DN20NS3GATMA1\'s switching characteristics, its low drain-source on-resistance (RDS(on)) makes it suitable for high-frequency, high-power switching applications. In addition, its low drain-source on-time (t(on)) and off time (t(off)) make it ideal for high-speed switching applications.

Conclusion

In conclusion, BSC22DN20NS3GATMA1 is a MOSFET transistor capable of withstanding high drain-source voltage and delivering a high drain current. It has a low RDS(on) and fast switching times that make it suitable for high-speed switching applications. BSC22DN20NS3GATMA1 is an ideal solution for a variety of applications, from motor control circuits to high-power amplifiers, and is available in both through-hole and surface-mount packages.

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