BSP88H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSP88H6327XTSA1TR-ND

Manufacturer Part#:

BSP88H6327XTSA1

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 4SOT223
More Detail: N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP88H6327XTSA1 datasheetBSP88H6327XTSA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.15519
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSP88H6327XTSA1 represents a type of semiconductor device called a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) which is classified as a single power switch. As a member of this class, it is a three-terminal device built in a discrete, small package and is suitable for low-power applications because of its low on-resistance and current carrying limitations.

MOSFETs have no gate current and little capacitance, allowing them to be used in wide variety of applications, including voltage regulation and amplification, power conversion and AC line regulation. The BSP88H6327XTSA1 is specifically used in high-side or low-side FET switch applications for industrial, consumer, and automotive power systems, such as LED drivers, HVAC systems, solar inverters, and motor drivers.

The BSP88H6327XTSA1 has two operating modes: a steady-state DC operation and a pulsed operation with predetermined limits. The DC operating point is maintained by the connection of the Gate pin to the Drain pin and by the bias circuit. The pulsed operation impulse width for the BSP88H6327XTSA1 can be adjusted with the Gate voltage and Drain current.

The BSP88H6327XTSA1 has an operating temperature range of -55°C ~ 150°C and its Drain source voltage is between 0V and 20V with a maximum Drain current rating of 0.5A. The Gate threshold voltage is also adjustable, allowing the user to customize the device’s switching threshold. The device has a low RDS(on) of 0.35Ω, making it well suited for applications that require fast switching and low switching losses.

The working principle used within the BSP88H6327XTSA1 is similar to that of MOSFETs; the threshold voltage of the Gate-Source PN junction is cross-coupled with the Drain-Source PN junction, making it a hybrid device. When the Gate voltage is near or surpasses the threshold voltage, the PN junction starts conducting, drawing Drain current. The current is then amplified by an external gate resistor and the drain current rises exponentially, until a current limit is reached. The high gain provided by this device makes it ideally suited for high-side and low-side switching applications.

The BSP88H6327XTSA1 is a useful component for low-power and high-power applications. The device can be used for voltage regulation, voltage reduction, amplification and AC line regulation. Furthermore, due its low on-resistance and low current carrying limitations, the device can be used in a variety of industrial, consumer and automotive applications, including LED drivers, HVAC systems, solar inverters and motor drivers. Additionally, the BSP88H6327XTSA1 also has adjustable gate and drain thresholds, allowing the user to customize the device\'s switch threshold.

The specific data is subject to PDF, and the above content is for reference

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