| Allicdata Part #: | 1727-2969-2-ND |
| Manufacturer Part#: |
BSP89,115 |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 240V 375MA SOT223 |
| More Detail: | N-Channel 240V 375mA (Ta) 1.5W (Ta) Surface Mount ... |
| DataSheet: | BSP89,115 Datasheet/PDF |
| Quantity: | 3000 |
| 1000 +: | $ 0.17388 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 5 Ohm @ 340mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 375mA (Ta) |
| Drain to Source Voltage (Vdss): | 240V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Bapsp89 and 115 are two models of transistors. They belong to the family of field effect transistors (FETs), most commonly known as MOSFETs. This type of transistor is a single-layer device composed of a semiconductor layer that acts as a gate terminal, surrounded by an insulator layer and two further contacts, the source and the drain.
These transistors, as the name suggests, operate on the principle of field effect. The electric field of the gate terminal, and the semiconductor material which it is in contact with, determines the conductivity between the source and the drain, ultimately deciding the resistance of the current flowing through them. The greater the electric field, the more conductive the transistor becomes. This is known as the drain current, which increases with the gate to source voltage.
The Bapsp89 and 115 are a range of transistors which are particularly useful in digital logic applications, as they can switch between a logic high of 5 volts, and a logic low of zero volts. This is achieved when a preset voltage is applied to the gate terminal of the transistor, and depending on the level, the current is allowed to flow or blocked.
This feature makes the Bapsp89 and 115 transistors ideal for applications where a high switching speed is required, and where very low power consumption (second only to complementary transistors) is needed. They are also highly efficient, which is possible due to the absence of a bias current. This means that when no voltage is applied to the gate, no current will flow through the source and drain.
In addition to digital logic applications, the Bapsp89 and 115 are also commonly employed in microprocessor development and LED-based systems, due to their low power consumption. They are also frequently found in linear applications, such as audio preamps, as they are able to accurately control the voltage and current flow. Lastly, these transistors are used in industrial automation and control systems, as well as in medical instruments where precise control of electrical signals is important.
The Bapsp89 and 115 transistors are an extremely useful and versatile option for applications that require high switching speeds, low power consumption and precision. They are especially suited to digital logic, microprocessor and LED-based systems, as well as linear applications and industrial automation and control systems.
The specific data is subject to PDF, and the above content is for reference
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BSP89,115 Datasheet/PDF