BSP89L6327HTSA1

Vgs(th) (Max) @ Id:	1.8V @ 108µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	140pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	6.4nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	6 Ohm @ 350mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	350mA (Ta)
Drain to Source Voltage (Vdss):	240V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSP89L6327HTSA1 is a kind of Transistors which belongs to FETs and MOSFETs - Single. It has a wide range of applications in the modern industries. In this article, we will discuss about the application field and working principle of BSP89L6327HTSA1.The BSP89L6327HTSA1 is typically used as a general-purpose device in digital test equipment and other industrial systems. It features fast switching and low on-state resistance. The small package of the IC allows for a high level of integration and efficient use of space. Additionally, the voltage controlled gate of the device enables low resistance switching and low gain at high frequencies.The BSP89L6327HTSA1 is a high-performance power MOSFET. It is designed to be used in applications that require high-speed switching and low on-state resistance. The device is built on a vertical double-diffused Metal Oxide Semiconductor (DMOS) technology with a vertical gate structure. This device is mainly used in applications such as consumer, power supplies, motor, drive, and power management.The BSP89L6327HTSA1 features an integral body diode; a low on-state resistance; and an internal temperature protection system (TDS). It also features an integrated ESD protection circuit, which enables the device to operate reliably in industrial applications.The working principle of the BSP89L6327HTSA1 is based on the application of a voltage to the gate terminal of the FET. This voltage controls the drain-source current. When the voltage is applied, holes are pushed out of the source region of the FET, resulting in the formation of an inversion layer. This inversion layer serves as a current carrying channel between the drain and source terminals of the FET. The current through this channel is controlled by the gate voltage. The gate-source junction of the FET acts as a capacitor and the parasitic capacitance controls the frequency response of the device. The BSP89L6327HTSA1 is often used in circuits where fast switching and low on-state resistance are required.In conclusion, the BSP89L6327HTSA1 is a high-performance power MOSFET that features an integral body diode, a low on-state resistance, and an internal temperature protection system. It is suitable for applications that require fast switching and low on-state resistance. The working principle of this device is based on the application of a voltage to the gate terminal of the FET. This voltage controls the current and the parasitic capacitance of the FET acts as a frequency response control. The device is suitable for a wide range of digital test equipment and industrial systems.

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