BSS205NL6327HTSA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BSS205NL6327HTSA1TR-ND |
| Manufacturer Part#: |
BSS205NL6327HTSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 2.5A SOT-23 |
| More Detail: | N-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount S... |
| DataSheet: | BSS205NL6327HTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 11µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 419pF @ 10V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.5A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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BSS205NL6327HTSA1 is one of the most popular types of power semiconductor devices suitable for use in many different applications. This MOSFET is a semiconductor fieldeffect transistor (FET) designed for use in power switching circuits, motors, and various other applications.
The BSS205NL6327HTSA1 is a single N-channel power MOSFET, meaning it is a type of field effect transistor (FET) with a single n-channel conduction path. This device is capable of providing high levels of current and voltage, making it suitable for use in higher power applications. Its N-channel design is ideal for use in increased power transfer and often requires lower drive voltage than other types of FETs.
A power MOSFET, such as the BSS205NL6327HTSA1, is composed of a thin-film semiconductor material sandwiched between a pair of oppositely charged electrodes. The electrodes, or gates, are conductive and allow or prohibit current to pass through the MOSFET, depending on whether they are in the “on” state or the “off” state. This allows the device to control the flow of power through the circuit, making it a highly efficient and effective device.
The BSS205NL6327HTSA1 is capable of providing high levels of power and current, making it suitable for use in a wide range of applications. This device is particularly suitable for use in power supplies, motor controllers, switching applications, power converters, and more. It also boasts excellent thermal performance, making it a great choice for applications which require high levels of heat dissipation.
The BSS205NL6327HTSA1 is renowned for its durability and reliability, making it a safe and cost effective choice for many applications. Its low on-state resistance allows for very low losses in power conversion, ensuring high efficiency and reduced heat generation in the circuit. The device’s very low gate charge means that the device can be switched on and off quickly, offering improved response times and allowing for greater control over the power to the device.
The BSS205NL6327HTSA1 is an excellent choice for use in many different applications and is renowned for its durability and reliability. Its excellent thermal performance and low on-state resistance make it an ideal choice for many high power applications, while its low gate charge makes it incredibly responsive and cost effective. The device is well suited to many applications and is an excellent choice for power management and control.
The specific data is subject to PDF, and the above content is for reference
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BSS205NL6327HTSA1 Datasheet/PDF