BSS209PWH6327XTSA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.2V @ 3.5µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	PG-SOT323-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	300mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	115pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	1.3nC @ 4.5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	550 mOhm @ 630mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	630mA (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>BSS209PWH6327XTSA1 is a single N-channel Power MOSFET, specifically designed for applications such as switching power supply, DC-DC converter, battery protection, etc. It is designed to operate at high current and low on-state resistance. The total gate charge, Qg, is only 5.3nC and the total gate input capacitance, Ciss, is only 4.8nF.</p><p>BSS209PWH6327XTSA1 is mainly used in applications that require low power on-state resistance, including various portable devices and power/motor control circuits. Its total gate charge and input capacitance are significantly lower than those of conventional devices. Low gate charge and input capacitance make this Power MOSFET suitable for applications that require high frequency operation. As a result, it is more suitable for high frequency applications and advanced control systems.</p><p>The working principle of Power MOSFETs like BSS209PWH6327XTSA1 can be summarized as follows. When an applied bias voltage exceeds the threshold voltage of the device, a strong electric field is created between drain-to-source, which makes electrons tunnel across the oxide, turning the device on. This conducting state is characterized by low on-state drain-to-source resistance. When the gate voltage decreases below the threshold, the electric field is no longer strong enough to keep the conducting state, so the device automatically turns off.</p><p>BSS209PWH6327XTSA1 is highly integrated and has low power consumption. Its structure includes a built-in temperature protection Schottky diode, which prevents the device from being burned out by passing overcurrent and minimizing effects of inductive load. The Total SPICE analyzer of the device is also developed with special algorithms to improve the accuracy of the gate and drain currents.</p><p>In conclusion, BSS209PWH6327XTSA1 is a single N-channel Power MOSFET with low gate charge and input capacitance. It is mainly used in applications that require low power on-state resistance such as portables and power/motor control circuits. Its working principle can be summarized as follows: When the gate voltage exceeds the threshold voltage, a strong electric field is created between drain-to-source, which turns the device on. When the gate voltage decreases below the threshold, the electric field is no longer strong enough to keep the conducting state and the device automatically turns off.</p>

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