BSS209PW L6327 Allicdata Electronics
Allicdata Part #:

BSS209PWL6327-ND

Manufacturer Part#:

BSS209PW L6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 580MA SOT-323
More Detail: P-Channel 20V 580mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: BSS209PW L6327 datasheetBSS209PW L6327 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSS209PW L6327 is a single P-Channel Field Effect Transistor (PFET) that can be used for a variety of purposes. It is a small-signal device that is widely used in audio/video equipment, communication systems, and many other electronic circuits and applications. In this article, we will discuss the application field and working principle of the BSS209PW L6327.

The BSS209PW L6327 is a non-logic P-channel Power Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) designed to meet the requirements of portable applications. It is a typical small-signal device that has an on-state resistance (RDS(ON)) of 54mΩ, a low turn-on threshold voltage of 1.6 V, and a low gate drive voltage of 2.9 V. This makes it an efficient and cost-effective choice for power management circuits, audio/video stabilisation circuitry, and many other general-purpose applications. It is also suitable for high-precision analogue circuits such as operational amplifiers, voltage converters, and many more.

The BSS209PW L6327 works on the principle of the depletion of charge carriers in the channel of an insulated gate field-effect transistor (IGFET) with applied voltage. It operates as a switch, utilizing current and voltage signals as inputs to turn a load on or off. A positive voltage is applied at the gate input of the device causing electrons to be depleted from the channel resulting in a decrease in the channel resistance and thus allowing current to flow through the device. This process is known as depletion mode. Alternatively, the device can be operated in enhancement mode by applying a negative voltage at the gate resulting in an increase in the channel resistance, thus turning the device off.

The BSS209PW L6327 is most suitable in applications where size and low-voltage operation are essential. Some of the common applications in which this device can be used include: audio/video equipment, monitor/video display systems, audio/video switching circuits, power switching systems, noise suppression circuits, protection circuits, load switching stages, inverter/driver circuits, temperature control circuits, and precision adjustable resistors.

To sum up, the BSS209PW L6327 is a non-logic P-channel MOSFET that is designed to meet the requirements of portable applications. It has excellent switching characteristics, low on-state resistance, and low gate drive voltage making it an efficient and cost-effective choice for a range of applications. It is suitable for audio/video equipment, power management circuits, precision analog circuits, and other general purpose applications. Additionally, it can be used in applications where size and low-voltage operation are essential.

The specific data is subject to PDF, and the above content is for reference

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