Allicdata Part #: | BTS133E3045AINTR-ND |
Manufacturer Part#: |
BTS133 E3045A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC SWITCH SMART LOWSIDE TO220SMD |
More Detail: | N/A |
DataSheet: | BTS133 E3045A Datasheet/PDF |
Quantity: | 1000 |
Voltage - Supply (Vcc/Vdd): | Not Required |
Base Part Number: | BTS133 |
Supplier Device Package: | PG-TO220-3-5 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Fault Protection: | Current Limiting (Fixed), Over Temperature, Over Voltage |
Features: | -- |
Input Type: | Non-Inverting |
Rds On (Typ): | 40 mOhm |
Current - Output (Max): | 7A |
Series: | HITFET® |
Voltage - Load: | 60V (Max) |
Interface: | On/Off |
Output Type: | N-Channel |
Output Configuration: | Low Side |
Ratio - Input:Output: | 1:1 |
Number of Outputs: | 1 |
Switch Type: | General Purpose |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BTS133 E3045A is an automotive rated 30V N-Channel power distribution switch used for various applications. It features integrated ESD (Electro-Static Discharge) protection diode, fast rise time and low on-state resistance. BTS133 E3045A is ideal for switching low side applications that require low on-state resistance and high off-state resistance. This device can be used in a wide range of applications, including automotive, industrial, and consumer applications.
The working principle of BTS133 E3045A is based on the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) technology. It uses a metal gate oxide to control the movement of electrons in a semiconductor material. The gate oxide is a very thin insulating layer between a metal gate and a semiconductor material, which allows it to control current by isolating the gate from the rest of the semiconductor material. When a voltage is applied to the gate, the electric field generated across the oxides allows electrons to flow from the source to the drain.
In addition, BTS133 E3045A also features integrated ESD (Electro-Static Discharge) protection diode. It prevents permanent damage caused by electrostatic discharge during switching operations. The ESD protection diode is connected between the drain and the supply voltage, so that any charge accumulated on the drain is discharged. This protects the chip from damage due to electrostatic discharge.
BTS133 E3045A is an ideal choice for applications that require fast rise time and low on-state resistance. Its wide range of operating temperature makes it suitable for a variety of operating environments, including automotive, industrial and consumer. Additionally, its low RDS(ON) value reduces overall system power consumption, while its integrated ESD protection diode prevents permanent damage due to electrostatic discharge.
In conclusion, BTS133 E3045A is a 30V N-Channel power distribution switch that is suitable for automotive, industrial, and consumer applications. It features low on-state resistance and fast rise time, as well as integrated ESD protection diode for preventing permanent damage due to electrostatic discharge. These features make it an ideal choice for various applications that require low on-state resistance and fast switching time. As such, BTS133 E3045A is a great option for power distribution switches, load drivers, and various other applications.
The specific data is subject to PDF, and the above content is for reference
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