Allicdata Part #: | BTS113AE3064NKSA1-ND |
Manufacturer Part#: |
BTS113AE3064NKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 11.5A TO-220AB |
More Detail: | N-Channel 60V 11.5A (Tc) 40W (Tc) Through Hole P-T... |
DataSheet: | BTS113AE3064NKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | P-TO220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Vgs (Max): | ±10V |
Series: | TEMPFET® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 5.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BTS113AE3064NKSA1 is a vertical power P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that is used in a range of electronic devices that need high power ratings. It is a single transistor, meaning that it only has one active element. It is an enhancement-mode device that uses voltage to control its current flow.This transistor is most commonly used in switching applications, as it is capable of handling high-current, high-voltage, and high-temperature loads. Additionally, this transistor can be used to control low-voltage and low-current circuits, making it a versatile device.The BTS113AE3064NKSA1 is a P-channel MOSFET, meaning it is composed of a positive voltage source, the gate terminal and a negative voltage source, the source terminal. In particular, the gate and the source terminals of this MOSFET will operate at separate voltages.The body or drain terminal of the BTS113AE3064NKSA1 is the area of the MOSFET where current is drawn from. At this terminal, electric current enters the transistor and exits it. This transistor operates in enhancement mode, meaning that the body terminal must be at a certain voltage level before current can flow through the transistor.The working principle of the BTS113AE3064NKSA1 is based on the capacitance that exists between the source and gate terminals. When the gate terminal is placed at a certain voltage, an electric field is formed that changes the capacitance between source and gate on the MOSFET. This leads to a modification of the flow of current through the device, as well as the voltage that is supplied at the source terminal.The main application field of the BTS113AE3064NKSA1 is electrical engineering. The transistor has the capability of switching and controlling high-current and high-voltage circuits that are required in the systems of electrical engineering industry, including those used in appliances, computing systems and automotive components.Additionally, the BTS113AE3064NKSA1 can also be used for low-current and low-voltage controlling that are often used in smaller-scale circuits. This makes it a versatile device that can be used in a range of different applications.In summary, the BTS113AE3064NKSA1 is a vertical power P-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single transistor that uses an enhancement mode to control currents. This transistor is most commonly used in switching applications and electrical engineering, but can also be used for small-scale controlling operations.
The specific data is subject to PDF, and the above content is for reference
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