BTS110NKSA1

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The BTS110NKSA is a power field-effect transistor (FET) made using high-voltage (HV) Multi-Epitaxial design technology. It is designed to act as a switch in the range of 400V – 1200V. It is an ideal choice for a number of applications, as its active cell structure, which provides a low RDSon, low capacitance, and high strain energy for high-reliability and high-temperature power semiconductor applications.

The BTS110NKSA is based on a vertical power MOSFET field of 4.5mm., and is composed of two cells. Each cell has a source, drain and gate connected in parallel. The cells are separated by a p+-guardring and insulated oxide layer, which improves the gate-source breakdown voltage and stability. The drain and source are connected to a center-stage device, which provides the switching capabilities, and the gate is connected directly to the gate-source section.

The BTS110NKSA is designed to provide high-current capability with high performance, while still operating at low switching losses. It is ideal for applications such as motor control and switchmode power supplies, as it offers low on-resistance (Rds), high-voltage (Vds) ratings, fast switching speeds, and a low total gate charge (Qg).

The BTS110NKSA is a single-phase MOSFET, which means it can be used as either a high-side or a low-side switch. When used as a low-side switch, the source is connected to the ground, and the drain and gate voltage is above or equal to the supply voltage. In this configuration, the low on-resistance (Rds) allows the BTS110NKSA to efficiently switch the current flow. The high-voltage channels of the BTS110NKSA can be used to switch the high-voltage gates.

As a high-side switch, the BTS110NKSA is used to switch the supply voltage, in which case the drain is connected to the supply voltage and the source is connected to the ground. In this configuration, the high P(D) rating allows the transistor to safely operate at high-voltages and high-currents.

The BTS110NKSA also features an advanced cell design that is optimized for low on-resistance (Rds) and high-temperature ruggedness. Its ultra-low gate-charge (Qg) saves power in applications where frequent switching is required, while also providing enough stability for long-term use, even at high temperatures. Additionally, its low capacitance (Ciss) and high strain energy (Ets) both contribute to its high-reliability operation.

In conclusion, the BTS110NKSA is an ideal choice for applications requiring high-performance and high-strain-energy operation at high-voltage. Its low on-resistance and low gate charge allow it to switch current efficiently while its advanced cell design offers ruggedness and high-temperature operation. Its low capacitance and high strain energy contribute to its high-reliability in applications requiring frequent switching and high-voltages.

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