Allicdata Part #: | BTS121ANKSA1-ND |
Manufacturer Part#: |
BTS121ANKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 22A TO-220AB |
More Detail: | N-Channel 100V 22A (Tc) 95W (Tc) Through Hole PG-T... |
DataSheet: | BTS121ANKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±10V |
Series: | TEMPFET® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 9.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BTS121ANKSA1 is a single N-channel MOSFET designed for use in a variety of power device applications. It is designed to provide high levels of efficiency and is one of the few devices that can handle up to 15A of current.
The BTS121ANKSA1 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is an electrically controlled solid-state device with a gate structure similar to that of an insulated-gate FET (IGFET). This type of device features a variety of operation modes, including both enhancement and depletion mode.
MOSFETs are commonly used in switching applications, allowing current to flow through a circuit in one direction only and providing a high level of efficiency. The BTS121ANKSA1 is ideal for use in applications such as DC-DC converters, motor control, automotive and industrial power management, audio amplifiers, system power supplies and other power switching applications.
The BTS121ANKSA1 operates by controlling the level of voltage between the gate and source terminals. When the voltage at its gate is increased, the current between the drain and source terminals is also increased. This is known as the enhancement mode.
The opposite also works in depletion mode, where the voltage at the gate is decreased and the current between the drain and source terminals decreases. The current can also be triggered on or off using a digital signal.
The BTS121ANKSA1 is designed to have low on-state resistance and low gate charge, making it very efficient and effective for power switching applications. It is also capable of withstanding up to 200V of input voltage and can handle up to 5V of gate drive voltage.
The BTS121ANKSA1 is also designed to be very cost-effective and is available in both through-hole (DIP) and surface mount (SMD) packages, making it suitable for use in a variety of applications. Additionally, it comes with a lifetime warranty so you can rest assured that it will be reliable over time.
In conclusion, the BTS121ANKSA1 is an N-channel MOSFET device that is ideal for use in power switching applications such as DC-DC converters, motor control, automotive and industrial power management, audio amplifiers, system power supplies and more. It operates by controlling the voltage between the gate and source terminals, using both enhancement and depletion modes. It is designed to have low on-state resistance, low gate charge and can handle up to 15A of current. The BTS121ANKSA1 is also cost-effective, available in two package types, and comes with a lifetime warranty.
The specific data is subject to PDF, and the above content is for reference
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