BTS113AE3045ANTMA1 Allicdata Electronics
Allicdata Part #:

BTS113AE3045ANTMA1TR-ND

Manufacturer Part#:

BTS113AE3045ANTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 11.5A TO-220AB
More Detail: N-Channel 60V 11.5A (Tc) 40W (Tc) Surface Mount TO...
DataSheet: BTS113AE3045ANTMA1 datasheetBTS113AE3045ANTMA1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-220AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Vgs (Max): ±10V
Series: TEMPFET®
Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BTS113AE3045ANTMA1 is a single N-Channel Field Effect Transistor (FET). FETs are solid-state current-carrying devices, and they are commonly used in integrated circuits due to their high input impedance and wide signal range. The advantage of using a FET is that they can be employed in a variety of applications and they are highly efficient. The BTS113AE3045ANTMA1 is a low voltage device with a breakdown voltage of 45V and a continuous current rating of 100mA.

The BTS113AE3045ANTMA1 is designed for use in applications such as telecom, power, and marine. It is a fast switching FET and can be used as a high-frequency switch in high-speed applications. The device also has agate-source voltage protection diode to protect against potential electrostatic discharge (ESD) ensuring reliable performance. In addition, the device has an on-state resistance of 150mΩ, making it an ideal choice for power management applications.

The working principle of the BTS113AE3045ANTMA1 is based on the principle of a field effect transistor. A field effect transistor has two terminals; the gate and the source. The gate is the controlling terminal, and when a voltage is applied to it, a strong electric field is generated which draws electrons or holes from the source terminal across the channel of the FET. This alters the conductance of the channel, allowing current to flow from the gate to the source or drain depending on the polarity of the voltage applied. This is the basic operation of FETs, and it is how the BTS113AE3045ANTMA1 works.

The BTS113AE3045ANTMA1 can be used in both analog and digital applications and is versatile enough to serve as either an switch or an amplifier. In digital applications, it can be used as an inverter, in which the polarity of the input voltage is reversed, or as a switch which can be used to control the flow of current. In analog applications, the device can be used as an amplifier with a gain of up to 10 times.

The BTS113AE3045ANTMA1 is a small, low-power, fast switching FET, making it an ideal choice for high-speed digital and analog applications. It is a relatively inexpensive device and its wide range of applications make it a popular choice for many different electronic applications.

The specific data is subject to PDF, and the above content is for reference

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