Allicdata Part #: | BTS115ANKSA1-ND |
Manufacturer Part#: |
BTS115ANKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 50V 15.5A TO-220AB |
More Detail: | N-Channel 50V 15.5A (Tc) 50W (Tc) Through Hole P-T... |
DataSheet: | BTS115ANKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TEMPFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 15.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 7.8A, 4.5V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 735pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | P-TO220AB |
Package / Case: | TO-220-3 |
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BTS115ANKSA1 MOSFETs are used in many electronic applications that require high-power switching or efficient voltage and current regulation. The main advantage of the BTS115ANKSA1 MOSFET is its low power dissipation over conventional FETs and bipolar transistors. It is an off-state insulated gate, field-effect transistor that utilizes a drain-source voltage (VDS) to control the current flowing through the device.
The working principle of the BTS115ANKSA1 MOSFET is similar to that of a conventional FET. It utilizes a metal-oxide-semiconductor (MOS) structure to control the electrical current passing through a channel when a voltage is applied to the gate. When a voltage is applied to the gate, electrons are attracted or repelled from the channel region, depending on the type of MOSFET. This effect creates a thin insulating layer between the gate and the semiconductor substrate, allowing current to flow through the channel.
The BTS115ANKSA1 MOSFETs can be used in many different applications which require a high current or voltage regulation. It can be used for power switching, motor control, switching regulators, and audio amplification. In these applications, the MOSFETs provide low power consumption and faster switching compared to other FETs and bipolar transistors. Thes MOSFETs are also used in high-voltage and high-frequency switching applications, where they provide increased performance while decreasing power consumption.
The BTS115ANKSA1 is also widely used in digital logic and analogue switching, where it is used to control the flow of current between two logic or analogue devices. This makes it ideal for use in applications where fast switching is needed, such as clock oscillators or logic gate control. In addition, it is also used in RF circuits, such as amplifiers, radio frequency power splitters, and frequency synthesizers. This is due to its ability to allow very high frequencies to pass from one device to another with very little loss.
In summary, the BTS115ANKSA1 MOSFET is a popular and versatile switching device, due to its low power consumption and fast response time. It can be used in many different applications, from power switching to digital logic and analogue switching. It also has good RF performance, making it ideal for use in RF circuits. With its wide range of functionality, this device can provide a great solution to many different problems and applications.
The specific data is subject to PDF, and the above content is for reference
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