BTS113ANKSA1

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The BTS113ANKSA1 is an N-channel enhancement mode vertical D-MOS transistor used mainly for the high-side switch in automotive applications.

This device is well-suited for high-current applications, operating at up to 55V and with a maximum drain current of 16 A. It features a low on-state resistance of 1.8 mΩ for efficient switching and minimized power dissipation.

This automotive integrated power switch offers low EMI emissions, fast switching times and low switching losses, making it ideal for automotive applications such as DC-DC converters, automotive electronics and motor control. Its small size and efficient packaging further allow it to be used in space-constrained applications.

The BTS113ANKSA1 is based on the process of the vertical double-diffused MOSFET (VDMOS) technology. This technology allows for an easier control of the gate voltage when compared to other types of power transistors.

The device consists of a vertical double-diffused MOS transistor structure fabricated on a silicon substrate. It is fabricated in two stages, the first being the formation of the N-well and the second being the formation of the drain and source regions. The device is then designed to have a substrate connection between the drain and source regions so that when a reverse bias is applied to the substrate, both the drain and source regions will be at the same potential. This creates an insulation layer between the drain and source regions, which reduces the electrical field in the transfer region and thus improves the on-state resistance of the transistor.

The working principle of the BTS113ANKSA1 involves the control of the drain-source voltage. When a voltage is applied to the gate of the transistor, it will create an electric field in the transfer region which will attract the majority carriers from the source region and allow them to move towards the drain region. This will lead to a decrease in the resistance of the transistor and as a result, a current will flow from the drain to the source region.

The device is also provided with a temperature-compensated intrinsic diode, which helps to maintain a lower on-state resistance at higher temperatures. The temperature-compensated intrinsic diode is interconnected between the switch and the source, which helps to increase the threshold voltage of the device and reduce the on-state resistance at lower temperatures.

The device also offers a built-in protection circuitry which helps to protect the switch and the load from voltage transients, short circuits and overtemperatures. The protection circuit consists of a voltage limiting circuit which helps to limit the voltage across the drain and source to a safe level, a short-circuit protection circuit which helps to reduce the peak drain current and a current limit circuit which helps to monitor the drain current and switches off the device when the current reaches a certain limit.

In summary, the BTS113ANKSA1 is a vertical D-MOS power transistor used for high-side switching applications, offering fast switching times, low switching losses and low EMI emissions, as well as a temperature compensation and protection circuitry. Its high current capability and low on-state resistance make it ideal for automotive applications, such as DC-DC converters, automotive electronics and motor control.

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