BUL1102E

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BUL1102E is an advanced NPN silicon planar epitaxial transistor of high voltage and medium current, widely used for high voltage switching and amplifying applications. It is classified under transistors - bipolar (BJT) - single because it consists of one single PN junction consisting of semiconductor material like silicon.

BUL1102E has a wide range of power dissipation with a maximum value of 1 watt. Its Collector-base and Emitter-base voltages are rated as 150 V and 60 V respectively. Its Collector-base breakdown voltage is greater than 150 V, while its Emitter-base breakdown voltage is rated as 6 V. BUL1102E has a collector current of 10 mA and an emitter current of 3 mA.

BUL1102E is widely used in a variety of applications, ranging from signals processing to applications that require high voltages and current ratings. Some of the application fields where BUL1102E is used include switch-mode power supplies, audio amplifying, voltage regulation, waveform generating, and oscillator circuits.

The working principle of BUL1102E is based on the basic principle of operation of a bipolar transistor. As the base voltage is increased, the collector-emitter voltage increases too, thus allowing more current to flow. It works as a voltage-to-current converter. The current gain of a BUL1102E transistor is also very good, which makes it an ideal choice for amplifying applications. It also has a low collector-emitter saturation voltage, which means that it produces strong and reliable signals.

The collector of the BUL1102E is connected to the power source, the base is connected to the signal source and the emitter is connected to ground. When the base voltage is increased, the current flow through the collector and the organization increases. This current flow is then regulated by the collector-emitter circuit and also by the base resistance.

The main advantages of the BUL1102E transistor include its very high breakdown voltage rating, its low collector-emitter saturation voltage, its high current gain and its good switching performance. It is also a very cost-effective transistor. Because of these features, BUL1102E transistors are used in a variety of applications requiring high-voltage and high-current operations, making them valuable components in electronic designs.

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