BUL1203E Allicdata Electronics
Allicdata Part #:

497-12451-5-ND

Manufacturer Part#:

BUL1203E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 550V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN 550V 5A 100W Through...
DataSheet: BUL1203E datasheetBUL1203E Datasheet/PDF
Quantity: 1997
Stock 1997Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 550V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 2A, 5V
Power - Max: 100W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Description

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BUL1203E is a n-channel enhancement mode MOSFET transistor, which belongs to the category of transistors - bipolar (BJT) - single. It is specially designed with fast switching, high-speed power switching, easy parallel connection and low on-resistance capabilities. Its low capacitance and on-resistance, combined with its small footprint, make it ideal for applications such as power management, motor control, switch mode, or linear post-processing stages.

The BUL1203E has a number of advantages over other MOSFETs. It has a much low on-resistance, which allows for very high switching frequencies. The device also has a low thermal resistance value, which means that the device can be used in environments with high temperatures. The main advantage is its low capacitance, which makes it suitable for high speed power switching applications, as well as for noise suppression.

The BUL1203E is composed of three terminals; the source, drain and gate. In the MOSFET structure, the source and drain are highly doped with n-type material, while the gate is insulated from the rest of the structure using a thin layer of silicon oxide. When a positive voltage is applied to the gate terminal, electrons are attracted to the oxide and a conducting channel is formed between the source and the drain, thus allowing current to flow.

When no current is flowing, the BUL1203E is said to be in the cut-off mode, due to the inability of electrons to pass through the oxide. The voltage applied at the gate terminal reflects the amount of current passing through the MOSFET. When the voltage is low, the electrons are not drawn sufficiently to form the conducting channel. This mode is referred to as the triode region or linear region. The current flow can be increased by increasing the gate voltage, resulting in a mode known as saturation or active mode.

The BUL1203E can be used in a wide range of applications. Its fast switching and low capacitance make it ideal for use in power management, motor control, switch mode, and linear post-processing stages. Its low on-resistance and low thermal resistance makes it suitable for use in high temperature environments. Its small footprint and easy parallel connections make it cost effective and space efficient, making it an ideal choice for most applications.

In conclusion, the BUL1203E is an excellent choice for a wide variety of applications. Its low capacitance and on-resistance, combined with its small footprint and easy parallel connections, make it ideal for power management, motor control, switch mode, or linear post-processing stages. Its low thermal resistance and fast switching capabilities make it suitable for high temperature environments. It is cost effective and space efficient, making it a great addition to any electronic system.

The specific data is subject to PDF, and the above content is for reference

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