Allicdata Part #: | BUL128FP-ND |
Manufacturer Part#: |
BUL128FP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 4A TO-220FP |
More Detail: | Bipolar (BJT) Transistor NPN 400V 4A 31W Through ... |
DataSheet: | BUL128FP Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1A, 4A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 14 @ 2A, 5V |
Power - Max: | 31W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Base Part Number: | BUL128 |
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The BUL128FP is a multi-purpose PNP transistor ideal for applications such as audio amplifiers, small signal switching and other general purpose low power applications. It has been designed and manufactured to the highest levels of quality and reliability. It is available in both through-hole and surface-mount packages to suit all types of application requirements. The BUL128FP offers superior performance, superior reliability, continuity and lower power consumption compared to other similar transistors.
The BUL128FP is a single PNP bipolar junction transistor. It is constructed from silicon semiconductor material, has three layers and is composed of four different regions. A P (positive) region between two N (negative) regions forms the transistor base. This is connected to an N-type (emitter) and a P-type (collector) region. Layers of the BUL128FP are chosen to best suit the current application, allowing for higher current capacity and higher frequencies than standard transistors. The BUL128FP is available in a variety of packages and current ratings to suit various applications.
The working principle of the BUL128FP is based upon the behaviour of two p-n junctions connected in a particular way. When a small current is applied to the base material, it causes a larger current to flow between the emitter and collector. This is known as the amplification effect and is used in many applications. The current gain (hFE) of the BUL128FP can be adjusted by changing the values of the bias resistors connected to the base of the transistor.
The BUL128FP can be used for many low power applications such as audio amplifiers, small signal switching and general purpose logic circuits. Its superior performance, reliability and lower power consumption makes it ideal for these applications. It is typically used in low noise audio amplifiers, signal conditioning, low noise audio preamplifiers and signal switching applications. The BUL128FP can also be used in other applications such as signal regeneration and signal conversion.
In addition to its popular use in low power applications, the BUL128FP is also used to control higher power operations. It is often used in high power switching applications such as motor control, light dimming and power supply control. It can also be used in linear voltage regulator circuits to obtain optimal performance levels.
In summary, the BUL128FP is a single PNP bipolar junction transistor ideal for audio amplifiers, small signal switching and other general purpose low power applications. It is constructed from silicon semiconductor material, has three layers, consists of four different regions and has an adjustable current gain (hFE). The transistor can be used for many low power applications, as well as high power operations such as motor control, light dimming and power supply control. It is available in a variety of packages and current ratings to suit different application requirements.
The specific data is subject to PDF, and the above content is for reference
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